2014
DOI: 10.1134/s0020168514060016
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Kinetics of terbium oxide film growth from Tb(dpm)3 vapor

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Cited by 5 publications
(7 citation statements)
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“…In particular, terbium sesquioxide (Tb 2 O 3 ) has attracted considerable attention in the past few years as a high-k material 1 − 3 and also as an active material for optical insulators and high-performance optoelectronic devices. 4 − 6 …”
Section: Introductionmentioning
confidence: 99%
“…In particular, terbium sesquioxide (Tb 2 O 3 ) has attracted considerable attention in the past few years as a high-k material 1 − 3 and also as an active material for optical insulators and high-performance optoelectronic devices. 4 − 6 …”
Section: Introductionmentioning
confidence: 99%
“…It is only recently that the growth of cubic Tb 2 O 3 polycristalline thin films was investigated for electronic or optronic applications. [6][7][8] The increasing interest for Tb 2 O 3 thin films is such that the availability of high quality rare earth sesquioxide substrates would certainly constitute an important progress. On the other hand, as soon as it became clear that cubic Tb 2 O 3 crystals could be made available, their use as Faraday rotators was patented.…”
Section: Introductionmentioning
confidence: 99%
“…Some authors have attributed the wavenumber reduction of the high-wavenumber optical modes of Eu 2 O 3 and Yb 2 O 3 to the larger deformation of the electron shells of Eu and Yb ions than those of other lanthanides. This has been associated to the presence of shallow f -states [10] ; however, it is clear that such effect cannot be linked to the half-filled 4f 7 configuration of the 2+ oxidation state, which is more stable than the 4f 6 [8] This observation, together with the results of the DFT calculations (Figure 4), suggests that the anomalous behavior of the high-wavenumber Raman modes of Eu 2 O 3 is not related to its specific electronic configuration. Thus, the presence of O vacancies in the crystal structure of Eu 2 O 3 could be responsible for the wavenumber reduction exhibited by some high-wavenumber Raman peaks of this compound.…”
Section: Resultsmentioning
confidence: 99%
“…These compounds may enable a wide range of technological advances including light emitters, catalysts, or high‐dielectric constant (high‐k) gates. Among this family of compounds, terbium oxide (Tb 2 O 3 ) has attracted considerable attention in the last few years as a high‐k material and also as an active material for high‐performance optoelectronic devices . Recently, it has been shown that millimeter‐sized C‐type Tb 2 O 3 pure single crystals can be grown with a controlled atmosphere flux method, using melting temperatures much lower than those of pure Tb 2 O 3 .…”
Section: Introductionmentioning
confidence: 99%
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