The total dose radiation response of radiation-resistant fullydepleted submicron n-MOS and PMOS transistors fabricated in SIMOX is presented. The total ionizing dose radiation induced threshold voltage shifts under three different irradiation bias conditions, including the worst case (pass-gate) bias for n-MOS transistors are discussed. Total dose hard fullydepleted p-MOS transistors are experimentally demonstrated. The larger threshold voltage shifts of fullydepleted n-MOS transistors as compared to partiallydepleted n-MOS transistors in an ionizing radiation environment are explained by a model coupling the radiation induced buried oxide charge to the top transistor.
We link atomic-scale defects called E′ centers to radiation-induced leakage current (RILC). We present evidence that strongly suggests that RILC tolerance is processing dependent and that this tolerance appears to be correlated with lower E′ center generation. We furthermore note that in oxides subjected to quite high irradiation levels, the density of (generally electrically neutral) E′ centers is far greater than would be expected for the hole trap E′ centers involved in the radiation-induced positive charge buildup observed in thicker oxides.
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