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An analytical model of the effect of heating on the high-power and high-temperature operation of semiconductor multiple quantum well lasers (MQWLs) is developed. Both the lattice heating and the carrier heating in the active region are shown to play an important role. The lattice heating predominates at high injection currents, while the carrier heating prevails at low currents. The maximum output power and the corresponding injection current are shown to be decreasing functions of temperature. The ways to increase the maximum output power of MQWLs are discussed. The effect of the series resistance on the maximum output power is investigated. Optimization of MQWLs with respect to the QW number and the cavity length is carried out. The results are illustrated by the example of a ridge MQW structure lasing at 1.3 µm. The theoretical and experimental dependences are compared.

The influence of selenious acid treatment on the GaAs surface and the M-GaAs interface electronic properties was studied. It is shown by XPS (x-ray photoelectron spectroscopy) analysis that such treatment deoxidizes the GaAs surface and forms a thin layer (< 3.0 nm) of selenium-gallium-arsenide compounds. Reduction of the Al-GaAs Schottky barrier effective height and low frequency noise was observed. The Schottky barrier height dependency on the metal work function is stronger for selenious-acid-treated GaAs surfaces than for conventionally cleaned ones, however far from the Schottky limit. This discrepancy is attributed to the intensity and type of interface reactions during Schottky contact formation on Se-treated surfaces.