Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP fabry-perot multiple-quantum-well laser diodes

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes

“…There are no clear differences in the noise characteristics of different structure laser diodes (Figs. 4 and 5) (Palenskis et al, 2003). Except long lasers (with cavity longer than 750 µm) that have worse characteristics (Fig.…”

“…In this Section, there are overviewed typical low frequency noise characteristics of singlemode distributed feedback (DFB) and multimode Fabry-Pérot (FP) laser diodes (Matukas et al, 1998Palenskis et al, 2003Palenskis et al, , 2006Pralgauskaite et al, 2004b). The presented results are for LDs with multiple quantum well (MQW) active region: different devices containing from 4 to 10 compressively strained quantum wells have been investigated.…”

“…4): lower efficiency, larger low frequency noise. Laser diodes with larger threshold current usually distinguish by worse other operation characteristics, too (Palenskis et al, 2003;Vurgafman & Meyer, 1997). Larger threshold current is related with more defective LD structure, what leads to the charge carrier leakage out of the active region: some defects randomly redistribute injected current between current component directly related with stimulated recombination and component associated with other processes (leakage current, non-radiative recombination) and lead to the more intensive 1/f α -type optical and electrical fluctuations.…”

“…This Section presents discussion on noise characteristics of Fabry-Pérot lasers during modehopping effect, description of physical processes that take place during mode-hopping (Palenskis et al, 2003;Pralgauskaite et al, 2004bPralgauskaite et al, , 2011Saulys et al, 2010).…”

“…During mode-hopping very intensive optical and electrical fluctuations with Lorentzian type spectrum are observed in the Fabry-Pérot laser operation (Figs. 3-5) (Palenskis et al, 2003;Pralgauskaite et al, 2011;Saulys et al, 2010). A detailed investigation of the low frequency noise characteristic of InGaAsP/InP Fabry-Pérot lasers with ten 4 nm thick compressively strained quantum wells in the active region was carried out in order to clear up the reasons of the mode-hopping and describe physical processes that lead to the very intensive optical and electrical noises, and high cross-correlation during mode-hopping.…”