A theoretical analysis and computer simulation of the threshold current density j th and characteristic temperature T 0 of multiple quantum well lasers (MQWLs) are presented. Together with the spontaneous radiative recombination, the Auger recombination and the lateral diffusive leakage of carriers from the active region are included into the model. A first-principle calculation of the Auger recombination current is performed. It is shown that the lateral diffusive leakage current is controlled by the radiative and Auger currents. When calculating the carrier densities, the electrons in the barrier regions are properly taken into account. Redistribution of electrons over the active region is shown to increase the threshold current considerably. The dependences of j th and T 0 on temperature, number of QWs, cavity length and lateral size are discussed in detail. The effect of lattice and carrier heating on j th and T 0 is investigated and shown to be essential at high temperature.
A microscopic quantum-mechanical analysis of the intervalence band absorption of radiation (IVA) with hole transition into the spin-orbit split-off band has been made. It was found that IVA can heavily influence the threshold characteristics and quantum efficiency of heterolasers based on InAs. A detailed study of the threshold characteristics as functions of temperature and heterostructure parameters has been analyzed taking into account IVA.
An analytical model of the effect of heating on the high-power and high-temperature operation of semiconductor multiple quantum well lasers (MQWLs) is developed. Both the lattice heating and the carrier heating in the active region are shown to play an important role. The lattice heating predominates at high injection currents, while the carrier heating prevails at low currents. The maximum output power and the corresponding injection current are shown to be decreasing functions of temperature. The ways to increase the maximum output power of MQWLs are discussed. The effect of the series resistance on the maximum output power is investigated. Optimization of MQWLs with respect to the QW number and the cavity length is carried out. The results are illustrated by the example of a ridge MQW structure lasing at 1.3 µm. The theoretical and experimental dependences are compared.
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