Role of carrier reservoirs on the slow phase recovery of quantum dot semiconductor optical amplifiers Appl. Phys. Lett. 94, 041112 (2009) Optical power of semiconductor lasers with a low-dimensional active region A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser. V C 2014 AIP Publishing LLC. [http://dx
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