High-power laser diodes based on asymmetric separate-confinement heterostructures

Vinokurov, D. A.; Zorina, S. A.; Kapitonov, V. A.; Murashova, A. V.; Nikolaev, D. N.; Stankevich, A. L.; Khomylev, M. A.; Shamakhov, V. V.; Leshko, A. Yu.; Lyutetskii, A. V.; Nalyot, T. A.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Tarasov, I. S.

doi:10.1134/1.1882804

Cited by 45 publications

(20 citation statements)

References 6 publications

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“…The major problem limiting the performance of lasers with extended waveguide is related to the fact that high-order transverse vertical modes have higher facet reflectivity compared to the fundamental mode and evolve with increase in injection current degrading the far-field pattern and causing kinks in the light -current characteristics. Some improvement can be made by careful positioning of the gain regions to enable better optical overlap with the fundamental mode, however, also in this approach beam divergence below 20 o was not realized [6]. Designs with mode expansion layers.…”

Section: Laser Designs To Improve the Performance By Fundamental Modementioning

confidence: 98%

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

et al. 2006

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We report on lasers and light emitting diodes based on the longitudinal photonic bandgap crystal (PBC) concept. The PBC design allows achieving a robust and controllable extension of the fundamental mode over a thick multi-layer waveguide region to obtain a very large vertical optical mode spot size and a very narrow vertical beam divergence. An efficient suppression of high order modes can be realized either by the optical confinement factor selection of the fundamental mode, which is localized at the "optical defect" region and has a higher overlap with the gain region. All the other modes spread across the thicker PBC waveguide. In another approach leakage loss selection can be used to suppress excited modes in case of absorbing substrate or the substrate with a higher-refractive index. In this paper we concentrate on growth and performance of high power single mode visible (650 nm) GaInP/AlGaInP PBC lasers, giving a comprehensive example. The devices show narrow far field pattern (full width at half maximum of vertical beam divergence of about 7º), which is stable up to the highest output powers. Differential efficiency up to 85% is demonstrated. Total continuous wave single mode output power as high as 120 mW is achieved in 4 micrometer-wide stripes. Infrared (980 nm) InGaAs/AlGaAs PBC lasers with a beam divergence down to 4.2 degrees and a high temperature stability of the threshold current are also demonstrated.

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Section: Laser Designs To Improve the Performance By Fundamental Modementioning

confidence: 98%

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

et al. 2006

View full text Add to dashboard Cite

show abstract

“…The major problem limiting the performance of lasers with extended waveguide is related to the fact that high-order transverse vertical modes have higher facet reflectivity compared to the fundamental mode and evolve upon an increase in injection current degrading the far-field pattern and causing kinks in the light -current characteristics. Some improvement can be made by careful positioning of the gain regions to enable better optical overlap with the fundamental mode, however, also in this approach beam divergences below 20 o have not been realized [6].…”

Section: Laser Designs To Improve the Performance By Fundamental Modementioning

confidence: 99%

High brilliance photonic band crystal lasers

Shchukin

Ledentsov

Gordeev³

et al. 2006

SPIE Proceedings

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High concentration of optical power in a narrow exit angle is extremely important for numerous applications of laser diodes, for example, for low-cost fiber pumping and coupling, material processing, direct frequency conversion, etc. Lasers based on the longitudinal photonic band crystal (PBC) concept allow a robust and controllable extension of the fundamental mode over a thick multi-layer waveguide region to achieve a very large vertical optical mode spot size and, consequently, a very narrow vertical beam divergence. Many undesirable effects like beam filamentation, lateral multimode operation and catastrophic optical mirror damage (COMD) are strongly reduced. 650 nm GaInP/GaAlInP PBC lasers show narrow far field pattern (FWHM~7º) stable up to the highest output powers. Differential efficiency up to 85% is demonstrated. Total single mode output power as high as 150 mW is achieved in 4 µm-wide stripes in continuous wave operation, being limited by COMD due to not passivated facets. The lateral far field FWHM is 4 degrees. 840 nm GaAs/GaAlAs PBC lasers show a vertical beam divergence of 8 o (FWHM) and a high differential efficiency up to 95% (L=500 µm). A total single mode CW power approaches 500 mW for 1 mm-long 4 µm-wide stripes devices at ~500 mA current, being COMD-limited. The lateral far field FWHM is 5 degrees. Another realization of a longitudinal PBC laser allows lasing in a single high-order vertical mode, a so-called tilted mode, which provides wavelength selectivity and substantially extends the possibility to control the thermal shift of the lasing wavelength. In a multilayer laser structure, where the refractive index of each layer increases upon temperature, it is possible to reach both a red shift of the lasing wavelength for some realizations of the structures, and a blue shift for some others. Most important, the absolute thermal stabilization of the lasing wavelength of a semiconductor laser can be realized.

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“…A moderately asymmetric [7,8] positioning of the active region off-center in the cavity may improve the vertical mode discrimination also in the waveguides with a high refractive index step by suppressing lasing of the high order optical modes. Optical losses < 0.4 cm −1 were reported for thick undoped waveguide laser diodes with vertical beam divergence 30 o FWHM [9]. Once significantly lower beam n-contact divergence is targeted (8 o FWHM was achieved in the off-center gain approach [6]), a large part of the optical cavity above the active region must be p-doped.…”

Section: Introductionmentioning

confidence: 98%

High differential efficiency tilted wave laser

et al. 2014

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We report results on 1060 nm GaAs/GaAlAs-based Tilted Wave Lasers employing multiple InGaAs quantum wells without strain compensation as active medium. The devices are edge-emitting lasers composed of a thin active waveguide optically coupled to a thick passive waveguide responsible to form a tilted optical wave that results in two narrow lobes in the vertical far field profile of the emitted laser light. Devices with different thicknesses of the passive waveguide have been fabricated. The laser with the 26 µm-thick waveguide has low internal losses of 1.4 cm -1 , reaches for the as cleaved facets device with 1.5 mm-long cavity the differential efficiency of 81%. The 50 µm broad area device demonstrates the maximum wall-plug efficiency in the continuous wave (cw) mode ~50% and the linear output power up to and above 4 W. The laser light is concentrated in two narrow vertical beams, each 2 o full width at half maximum in a good agreement with theory.

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High-power laser diodes based on asymmetric separate-confinement heterostructures

Cited by 45 publications

References 6 publications

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

High brilliance photonic band crystal lasers

High differential efficiency tilted wave laser

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