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Electroreflectance and deeplevel transient spectroscopy studies of metal/nInP interfaces

The deep level transient spectroscopy (DLTS) technique has been used to study changes in electron trapping centers as a function of substrate growth temperature (550 °C≲Tsub≲675 °C) in n-Al0.25Ga0.75As Schottky barriers grown by molecular beam epitaxy (MBE). The principal result is a deep level at Ec−0.78 eV which decreases by over an order of magnitude in concentration as the growth temperature is increased from 575 to 675 °C.

We report the first direct observation of deep levels associated with the n-GaAs/N-Al0.25Ga0.75As heterointerface in a double heterostructure (DH) laser grown by molecular beam epitaxy (MBE). The concentration of these states in a nonoptimum device having a high threshold current density is 3×1010 cm−2. The states have an average energy of Ec−0.66 eV and appear to be localized in the n-GaAs within 140 Å of the interface. The relationship of these states to the laser threshold is discussed.