A new nitride semiconductor, single crystalline ZnGeN 2 has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN 2 is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN 2 are a = 3.186 ± 0.007 Α, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

As one of the main appendages of skin, hair follicles play an important role in the process of skin regeneration. Hair follicle is a tiny organ formed by the interaction between epidermis and dermis, which has complex and fine structure and periodic growth characteristics. The hair growth cycle is divided into three continuous stages, growth (anagen), apoptosis-driven regression (catagen) and relative quiescence (telogen). And The Morphogenesis and cycle of hair follicles are regulated by a variety of signal pathways. When the signal molecules in the pathways are abnormal, it will affect the development and cycle of hair follicles, which will lead to hair follicle-related diseases.This article will review the structure, development, cycle and molecular regulation of hair follicles, in order to provide new ideas for solving diseases and forming functional hair follicle.

This letter presents a study of optical phonon modes of single-crystalline orthorhombic ZnSiN2 semiconductor epitaxially deposited on r-sapphire. An epitaxial relationship for ZnSiN2 film was found from x-ray diffraction to be (0k0)ZnSiN2‖(10 1̄2)Al2O3 and [100]ZnSiN2‖(12̄10)Al2O3. Six B1 optical modes were revealed in 400–1000 cm−1 range in s-polarized infrared reflectance spectra. This is consistent with the analysis of the phonon symmetry and selection rules presented. The frequencies of the transversal and longitudinal components, phonon damping, and oscillator strengths of the B1 phonons as well as high frequency dielectric constant ε∞xx of the orthorhombic ZnSiN2 were determined.

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A new nitride semiconductor, single crystalline ZnGeN2 has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN2 is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN2 are a = 3.186 ± 0.007 A, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

SrxBa1−xNb2O6 films have been epitaxially grown on MgO substrates by a single-source plasma-enhanced chemical vapor deposition (PE-CVD). Exceptionally high quality of the epitaxial films was observed as indicated by high-resolution synchrotron x-ray diffraction imaging. The films exhibit waveguiding behavior with values of refractive index and the linear electro-optic coefficient r51 close to those of bulk crystals.

Background: Thymic epithelial tumors (TETs) are rare malignant neoplasms originating from thymic epithelial cells. The current treatment for localized TETs is surgical removal. However, 20-30% of thymomas and 70-80% of thymic carcinomas are unresectable, recurrent, or metastatic at the time of detection. The standard therapy for these patients is chemotherapy, but the effect is limited. With a deeper understanding of tumor immunity, immunotherapy for various cancers has rapidly developed. Antibodies against cytotoxic T-lymphocyte antigen-4, programmed death-1, and programmed death-ligand 1 have been approved for the treatment of many solid tumors. Compared with traditional treatments, these immune checkpoint inhibitors (ICIs) have better efficacy and lower toxicity. Recently, ICIs have been used more enthusiastically in the treatment of TETs. However, due to the unique biological characteristics of the thymus, immunotherapy usually causes severe immune-related adverse events (irAEs). Most previous studies on immunotherapy in TETs had small sample sizes and reported diverse conclusions. Methods: We collected relevant studies in PubMed during the last five years and analyzed the available data to discuss the efficacy and safety of ICIs in TETs.Results: According to 14 previous studies in the past five years, all TETs showed expression of programmed death-ligand 1, while thymic carcinomas showed 100% expression. The best median progression-free survival (mPFS) among the five studies was 6.5 months, and the best median overall survival (mOS) was 24.9 months. In addition, the most common irAEs were myasthenic symptoms, liver enzyme elevation, and elevated creatine phosphokinase levels. Conclusions: ICIs can be used in TET treatment, especially for thymic carcinomas, in the absence of standard second-line treatment. However, more attention should be paid to irAEs.

The growth of unintentionally doped indium phosphide by low pressure metalorganic chemical vapor deposition (LPMOCVD) using triethlylindium and phosphine has been investigated by low temperature photoluminescence (PL). Pregrowth annealing was found to result in improved crystalline quality of the seed surface. The predominant acceptor impurity on the annealed substrate surface and in the initial epitaxial region (1200 Å) was shown to be carbon. The major acceptor impurity in thicker epilayers further away from the substrate interface was determined to be Zn. Silicon was also identified from the PL spectra, though its concentration might be much smaller than that of zinc. No deep level impurities were observed in this material. Most important of all, the highly resolved exciton PL spectrum demonstrated that excellent quality InP comparable to the best material grown by vapor phase epitaxy could be grown by LPMOCVD without the need for phosphine cracking.