An LPE grown InP based optothyristor for power switching applications

Lis, R.; Zhao, J.H.; Liang, Zhu; Illan, J.; McAfee, S.; Burke, T.; Weiner, M.; Buchwald, Walter R.; Jones, Kenneth A.

doi:10.1109/16.285035

Cited by 9 publications

(6 citation statements)

References 10 publications

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“…Unlike light triggered thyristors and optothyristors [14] in which inherent thyristor like latch-up problems and a semi-insulating thick layer make it turn off slowly and have a large voltage drop. [15,16] It shows that the devices are latch-free devices, turning off the trigger light ensures that turn-off of the device and fall time is much longer than the rise time as shown in Fig. 6.…”

Section: -2mentioning

confidence: 98%

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

蒲红斌¹,

曹琳²,

陈治明³

et al. 2011

Chinese Phys. B

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A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

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Section: -2mentioning

confidence: 98%

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

蒲红斌¹,

曹琳²,

陈治明³

et al. 2011

Chinese Phys. B

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“…Commercially available opto-thyristors usually can block voltages in the range of 0.8 to 10 kV and conduct currents between 20 A to 5 kA [26][27][28]. The switching frequency of these devices is in the range from 1 kHz to 1 MHz [29].…”

Section: Opto-thyristorsmentioning

confidence: 99%

Opto-Electronics Review

Piwowarski

2020

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Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.

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“…Тиристоры на основе арсенида галлия, выращенные методом газофазной эпитаксии из металлоорганических соединений (ГФЭ МОС), привлекают в последнее время внимание исследователей с точки зрения создания низковольтных сильноточных ключей, применяемых, например, для решения проблемы генерации коротких импульсов тока большой амплитуды в цепях с низкоимпедансной нагрузкой [1]. Практически все известные на сегодняшний день исследования по созданию A III B V тиристоров (в том числе на GaAs-структурах) проводились с высоковольтными конструкциями, выращенными методом жидкофазной эпитаксии [2,3]. В основе этих конструкций были толстые (от десятков до сотен микрометров), слаболегированные (∼ 10 14 −10 15 см −3 ) базовые слои, обеспечивающие напряжение переключения ∼ 1 кВ.…”

Section: Introductionunclassified

Влияние химической обработки и топологии поверхности на блокирующее напряжение GaAs тиристорных мезаструктур, выращенных методом ГФЭ МОС

Chigineva¹,

Байдусь²,

Некоркин³

et al. 2022

Физика И Техника Полупроводников

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The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.

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An LPE grown InP based optothyristor for power switching applications

Cited by 9 publications

References 10 publications

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

Opto-Electronics Review

Влияние химической обработки и топологии поверхности на блокирующее напряжение GaAs тиристорных мезаструктур, выращенных методом ГФЭ МОС

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