The phase diagram of the CdGa 2 Se 4-Sb 2 Se 3 system was investigated by differential-thermal analysis, powder X-ray diffraction, and metallography. The system is of the eutectic type with coordinates of the eutectic point ~88 mol.% Sb 2 Se 3 and 835 K. From the constructed phase diagram, an optimum concentration of the Sb 2 Se 3 solvent was selected, and single crystals of CdGa 2 Se 4 were grown by the solution-melt method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.05 eV. A weak absorption band at 1.5-1.7 eV is attributed to the antimony impurity.
Equilibria E 4000The Quasi-Ternary CdSe-Ga2Se3-Sb2Se3 System. -The title system is characterized by DTA, XRD, and metallography. Phase diagrams of three vertical sections, an isothermal section at 670 K, as well as a projection of the liquidus surface are constructed. The results can be employed for the growth of CdGa2Se4 single crystals from non-stoichiometric melts. -(SOSOVSKA, S. M.; OLEKSEYUK, I. D.; PARASYUK*, O. V.; Pol.
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