2006
DOI: 10.1016/j.jallcom.2005.09.031
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Phase diagram of the CdGa2Se4−Bi2Se3 system and growth of CdGa2Se4 single crystals

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Cited by 14 publications
(17 citation statements)
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“…The slow cooling process was carried out up to room temperature with a rate of 5 K h −1 . The crystal used for the present experimental study was a single-phase orange material with the energy gap of 2.35 ± 0.05 eV as estimated from the absorption edge measured at 298 K [20]. The above value of the energy gap corresponds well to that (2.33 eV) obtained by Kim et al [29] for a CdGa2Se4 single crystal.…”
Section: Methodssupporting
confidence: 81%
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“…The slow cooling process was carried out up to room temperature with a rate of 5 K h −1 . The crystal used for the present experimental study was a single-phase orange material with the energy gap of 2.35 ± 0.05 eV as estimated from the absorption edge measured at 298 K [20]. The above value of the energy gap corresponds well to that (2.33 eV) obtained by Kim et al [29] for a CdGa2Se4 single crystal.…”
Section: Methodssupporting
confidence: 81%
“…[34]. This fact can be explained by a bigger value of the energy gap, E g , of CdGa 2 S 4 (E g ≈ 3.50 eV [30]) as compared with that of CdGa 2 Se 4 (from 2.33 to 2.57 eV [12,20,[29][30][31]). …”
Section: Resultsmentioning
confidence: 99%
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“…Unfortunately, the formation of significant solid solutions up to several mol.% of the ternary phase was observed in all cases. More interesting is the use of Bi 2 Se 3 [6] or PbSe [7]. Large ionic radii of Bi 3+ and Pb 2+ give rise to a very limited incorporation of these ions into the CdGa 2 Se 4 structure.…”
Section: Introductionmentioning
confidence: 99%