Phase diagram of the CdGa2Se4–Sb2Se3 system and single crystal growth of CdGa2Se4

Abstract

The phase diagram of the CdGa 2 Se 4-Sb 2 Se 3 system was investigated by differential-thermal analysis, powder X-ray diffraction, and metallography. The system is of the eutectic type with coordinates of the eutectic point ~88 mol.% Sb 2 Se 3 and 835 K. From the constructed phase diagram, an optimum concentration of the Sb 2 Se 3 solvent was selected, and single crystals of CdGa 2 Se 4 were grown by the solution-melt method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.05 eV. A weak absorption band at 1.5-1.7 eV is attributed to the antimony impurity.

The quasi-ternary CdSe–Ga2Se3–Bi2Se3 system

“…The Comparing the investigated system with earlier studied systems [12][13][14][15][16], we can recognize the absence of quaternary phases and the limited solid solubility based on CdGa 2 Se 4 , and the presence of primary crystallization fields of both the HT-and LTmodification of the ternary phase. The section joining CdGa 2 Se 4 and the third component is quasi-binary of the eutectic type in all the systems.…”

“…There were attempts to grow CdGa 2 Se 4 single crystals using chemical transport reactions with iodine as a transport agent [5][6][7][8][9]. Furthermore, the growth of single crystals from different melts is described in several studies [10][11][12][13][14][15], since non-stoichiometric melts can offer growth temperatures lower than the polymorphous transformation temperature. In this respect, the selection of the solvent is an important issue.…”

“…In this respect, the selection of the solvent is an important issue. We have tested a series of different solvents: SnSe 2 [12], SnSe [13], Sb 2 Se 3 [14], Bi 2 Se 3 [15], and PbSe [16]. The corresponding binary phase diagrams exhibit a primary crystallization field of the low-temperature CdGa 2 Se 4 modification.…”