The effects of p-GaN capping layer and p-type carrier-blocking layer on the occurrence of parasitic emissions from 353 nm AlGaN-based light emitting diodes (LEDs) have been investigated. LEDs without a p-type Al 0:25 Ga 0:75 N carrier-blocking layer showed a shoulder peak at 370 nm due to electron overflow into the p-Al 0:10 Ga 0:90 N cladding layer and subsequent electron-hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by luminescence at 420 nm from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence centered at 520 nm was emitted from the AlGaN layers within the quantum wells.
Copper oxide resistive memory layers have been synthesized by ion implantation. Devices fabricated from off-stoichiometric Cu2O exhibited unipolar switching in forward/reverse bias without a forming voltage. The on-state conduction of these devices is likely dominated by a metallic filament, which ruptures via Joule heating to transition the device to the high resistance off-state. Technology scaling was achieved by oxygen implanting copper filled vias. The resulting via-based memory devices exhibited unipolar resistive switching down to 48 nm in diameter.
Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current limit. The RESET current increased proportionally to the SET current, while the on-state resistance varied inversely to the SET current. These results are consistent with a RESET process that is directly linked to the peak power during SET. The trade-off between the switching endurance and memory window that results from the SET process is also shown.
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