Solid-state quantum emitters that couple coherent optical transitions to long-lived spin states are essential for quantum networks. Here we report on the spin and optical properties of single tin-vacancy (SnV) centers in diamond nanostructures. Through magneto-optical spectroscopy at 4 K, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, and measure electron spin lifetimes. We find that the optical transitions are consistent with the radiative lifetime limit and that the spin lifetimes are longer than for other inversion-symmetric color centers under similar conditions. These properties indicate that the SnV is a promising candidate for quantum optics and quantum networking applications.A central goal of quantum information processing is the development of quantum networks consisting of stationary, long-lived matter qubits coupled to flying photonic qubits [1,2], with applications in quantum computing, provably secure cryptography, and quantumenhanced metrology [3]. Among matter qubits, quantum emitters in wide-bandgap semiconductors [4,5] have emerged as leading systems as their coherent, spinselective optical transitions act as an interface between quantum information stored in their spin degrees of freedom and emitted photons. While most work has so far focused on the nitrogen-vacancy (NV) center in diamond [6-8], its relatively poor optical properties, including a low percentage of emission into the coherent zero-phonon-line (ZPL) [9] and large spectral diffusion when located near surfaces [10,11], have fueled the investigation of alternative emitters. These include the group-IV color centers in diamond [12], comprising the silicon-vacancy (SiV) [13][14][15][16], germanium-vacancy (GeV) [17,18], and the recently observed lead-vacancy (PbV) [19] centers. These centers have a large fraction of emission into the ZPL and a crystallographic inversion symmetry that limits spectral diffusion and inhomogeneous broadening [20,21]. Unlike the NV center, however, the electronic spin coherence of SiV and GeV centers is limited by phonon scattering to an upperlying ground-state orbital [22,23], requiring operation at dilution-refrigerator temperatures (∼ 100 mK) [24,25], or controllably induced strain [26] to achieve long coherence times.The tin-vacancy (SnV) center in diamond [27, 28] is a group-IV color center that promises favorable optical properties and long spin coherence time at readily achievable temperatures (liquid helium, ∼ 4 K). DFT calculations predict that the SnV has the same symmetry as the SiV and GeV[9], while experimental measurement of a large ground-state orbital splitting indicates that single-phonon scattering, the dominant spin dephasing mechanism of SiV and GeV centers at liquid helium temperatures, should be suppressed significantly [27]. In this work, we report spectroscopic measurements that are consistent with the conjectured electronic structure of the SnV, demonstrate that its optical...

We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-μm-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films.

The combination of long spin coherence time and nanoscale size has made nitrogen vacancy (NV) centers in nanodiamonds the subject of much interest for quantum information and sensing applications. However, currently available high-pressure high-temperature (HPHT) nanodiamonds have a high concentration of paramagnetic impurities that limit their spin coherence time to the order of microseconds, less than 1% of that observed in bulk diamond. In this work, we use a porous metal mask and a reactive ion etching process to fabricate nanocrystals from high-purity chemical vapor deposition (CVD) diamond. We show that NV centers in these CVD nanodiamonds exhibit record-long spin coherence times in excess of 200 μs, enabling magnetic field sensitivities of 290 nT Hz(-1/2) with the spatial resolution characteristic of a 50 nm diameter probe.

We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.

Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray scale lithography process, demonstrating a photon extraction efficiency of (41 ± 5)%. This device enables a raw experimental detection efficiency of (12 ± 1)% with fluorescence detection rates as high as (4.114 ± 0.003) × 10 counts per second (cps) from a single NV center. Enabled by our deterministic emitter localization and fabrication process, we find a high number of exceptional devices with an average count rate of (3.1 ± 0.9) × 10 cps.

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COLLECTIONS This paper was selected as Featured ARTICLES YOU MAY BE INTERESTED INInvited Article: Broadband highly efficient dielectric metadevices for polarization control APL Photonics 1, 030801 (2016) A key challenge for quantum information science is to efficiently entangle multiple quantum memories for quantum networking and distributed quantum computing. The negatively charged nitrogen vacancy (NV) defect center in diamond satisfies critical requirements for solid-state qubits 1,2 and stands out as one of the most promising atom-like solid state defects due to its optical addressability and long-lived electronic and nuclear spin states.3 Electron spin coherence times have been observed to be in the milliseconds regime at room temperature 4 and approaching one second at cryogenic temperatures.5 These properties have enabled demonstrations of NV based quantum registers, 6 qubit gates, 7 and NV-photon entanglement. 8 Recently, NV-to-NV quantum entanglement 9 and teleportation 10 have been shown, conceivably enabling a network of numerous NVs remotely entangled via two-photon quantum interference. 11However, the generation of scalable quantum networks is currently hindered by a slow entanglement rate (1 event per ∼250 s 10 ) compared to the NV spin decoherence rate. Photon-mediated entanglement relies on the successful entanglement of NV-emitted photons with its electron spin. 12Only photons emitted via the NV zero-phonon line (ZPL) can exhibit this property.13 However, the NV natural decay rate into the ZPL is small, determined by a Debye Waller (DW) factor of ∼3%; 14 a M. Schukraft and J. Zheng contributed equally to this work.

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.