Phosphine (PH3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-type conduction upon the introduction of PH3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH3 to silane (SiH4) gas ratio was increased from 2 x 10(-5) to 2 x 10(-3). These results demonstrate that PH3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.
Over the past two years, the heat treatment of corundum involving lattice diffusion of beryllium (Be) at temperatures over 1800°C has become a major issue in the gem trade. Although initially only orange to orangy pink ("padparadscha"-like) sapphires were seen, it is now known that a full range of corundum colors, including yellow and blue as well as ruby, have been produced or altered by this treatment. An extension of the current understanding of the causes of color in corundum is presented to help explain the color modifications induced by Be diffusion. Empirical support is provided by Bediffusion experiments conducted on corundum from various geographic sources. Examination of hundreds of rough and faceted Be-diffused sapphires revealed that standard gemological testing will identify many of these treated corundums, although in some instances costly chemical analysis by mass spectrometry is required. Potential new methods are being investigated to provide additional identification aids, as major laboratories develop special nomenclature for describing this treatment.
There has been a considerable effort in the past decade to incorporate nitrogen into SiO2 in order to improve the electrical properties of ultrathin (2–10 nm) gate oxides. Process conditions affect the nitrogen concentration, coordination, and depth distribution which, in turn, affect the electrical properties. X-ray photoelectron spectroscopy (XPS) is particularly well suited to obtaining the nitrogen coordination and, to a lesser extent, the nitrogen concentration in thin oxynitride films. To date, at least four different nitrogen coordinations have been reported in the XPS literature, all having the general formula: N(–SixOyHz), where x+y+z=3 and x⩽3, y⩽1, z⩽2. In this article we review the XPS literature and report on a fifth nitrogen coordination, (O)2=N–Si, with a nitrogen 1s binding energy of 402.8±0.1 eV. Next nearest neighbor oxygen atoms shifted the N(–Si)3 peak roughly 0.1 eV per oxygen atom. We also discuss results from a novel approach of determining the nitrogen areal density by XPS, the accuracy of which is dependent on the depth distribution of nitrogen. Secondary ion mass spectrometry is used to determine the depth N distribution, while nuclear reaction analysis is used to check the N concentration measured by XPS.
There are many potential sensing
applications for Au nanorods due
to a tunable localized surface plasmon resonance (LSPR) frequency
that changes with aspect ratio. However, their application at high
temperatures is limited due to a shape change that can take place
well below the melting point of bulk Au, driven by a reduction in
surface energy. A method of stabilizing Au nanorods is provided here
by encapsulating them with a 15 nm capping layer of yttria stabilized
zirconia (YSZ). After annealing rods with nominal dimensions of 100 ×
44 nm to a temperature of 600 °C, small reductions in length
were observed, but the rods remained stable for all subsequent sensing
tests at 500 °C, which amounted to 80 h. It was shown with a
separate sample that the rod geometry can be preserved even up to
800 °C over a 12 h annealing period, although a significant shortening
of the rod length occurred, leaving a void space in the YSZ. The sensing
response of both the transverse and the longitudinal LSPR peaks was
monitored for H2, CO, and NO2 exposures in an
air background at 500 °C. In all cases, the longitudinal LSPR
peak shows a larger shift upon gas exposure than does the transverse
peak.
We present the study of a nanohybrid composite with superior sensing performance consisting of an emissive sensory polymer infiltrated into a mesoporous Si one-dimensional (1D) photonic crystal with a microcavity (MC). It was found that the critical condition for deep polymer infiltration is the presence of an initial low porosity layer (porosity of 45%) in contrast to shallow infiltration governed by an initial high porosity layer (porosity of 58%). This results in a narrow fluorescence peak (due to deep infiltration) or a spectral "hole" in the fluorescence band (shallow infiltration). Such a unique effect is in agreement with the model based on capillary filling and confirmed by secondary ion mass spectrometry (SIMS) data analyzing the profile of polymer infiltration along the MC depth. In the case of deep infiltration, the characteristic filling length exceeds 2 μm, allowing the polymer to impregnate the MC layer. The infiltrated polymer is spatially confined and exists as quasi-isolated chains without pore clogging as can be concluded from the "blue" spectral shift of up to 10 nm as compared with a nonspatially confined film. Polymer isolation over a large surface area along with sufficient pore openings makes this porous Si (PSi) MC/ polymer nanohybrid an ideal material for gas sensing applications. This is due to the high sensitivity in conjunction with a strong fluorescence signal which is not possible with solid polymer films or bare PSi. These results are confirmed by direct observation of higher sensitivity, enhanced specificity, and partial recovery of the optical signal for the nanohybrid composite upon exposure to trinitrotoluene vapors as compared with a conventional polymer film deposited on a flat substrate.
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