The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an extrinsic and an intrinsic point of view. It appears that the minimum noise figure is similar for the two devices even if the intrinsic noise sources are different. We explain this phenomenon using the double-heterojunction mode of operation.
-The design of a coplanar low-noise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 -31 GHz frequency band with a 20 dB power gain.
-The design of a coplanar low-noise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 -31 GHz frequency band with a 20 dB power gain.
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