On-wafer noise characterization of low-noise amplifiers in the Ka-band

Long, S.; Escotte, L.; Graffeuil, J.; Brasseau, F.; Cazaux, Jean-Louis

doi:10.1109/tim.2003.817156

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Additionally, the size chosen for the transistors of all the stages of the designed amplifier corresponds to the selected one: 4 fingers × 20 µm gate periphery. Furthermore, a four-fingered MESFET was used to minimize the parasitics in the gate pad due to their parallelism and, at the same time, succeed in an adequate gain suitable for the design specification [35,36]. In general, it has been assumed that a single-stage amplifier configured in singleended mode has approximately the same gain as a stage in differential mode.…”

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confidence: 99%

Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing

Jimenez-Martin,

Gonzalez-Posadas,

Parra-Cerrada

et al. 2024

Sensors

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A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA in the frequency band from 1 to 16 GHz are shown, with a high dynamic range, and a noise figure (NF) below 1.3 dB is obtained. In this work, two low-noise amplifiers (LNAs) were designed and manufactured in the OMMIC foundry: a dual LNA, which we call balanced, and a differential LNA, which we call DLNA. However, the paper focuses primarily on DLNA because of its differential architecture. Both use a 70 nm GaAs mHEMT space-qualified technology with a cutoff frequency of 300 GHz. With a low power bias Vbias/Ibias (5 V/40.5 mA), NF < 1.07 dB “on wafer” was achieved, from 2 to 16 GHz; while with the measurements made “on jig”, NF = 1.1 dB, from 1 to 10 GHz. Furthermore, it was obtained that NF < 1.5 dB, from 1 to 16 GHz, with a figure of merit equal to 145.5 GHz/mW. Finally, with the proposed topology, several LNAs were designed and manufactured, both in the OMMIC process and in other foundries with other processes, such as UMS. The experimental results showed that the NF of the DLNA MMIC with multioctave bandwidth that was built in the frequency range of the L-, S-, C-, and X-bands was satisfactory.

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confidence: 99%

Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing

Jimenez-Martin,

Gonzalez-Posadas,

Parra-Cerrada

et al. 2024

Sensors

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“…The small-signal and noise model of the power transistors are extracted from scattering and noise parameter measurements carried out up to 40 GHz. The noise parameters are measured using a Ka-band sourcepull test bench developed in our laboratory [7]. This model is scalable in terms of gate geometry (width and number of gate fingers) and drain current I ds .…”

Section: Device Characteristicsmentioning

confidence: 99%