Since its first experimental realization, tip-enhanced Raman spectroscopy (TERS) has emerged as a potentially powerful nanochemical analysis tool. However, questions about the comparability and reproducibility of TERS data have emerged. This interlaboratory comparison study addresses these issues by bringing together different TERS groups to perform TERS measurements on nominally identical samples. Based on the spectra obtained, the absolute and relative peak positions, number of bands, peak intensity ratios, and comparability to reference Raman and surface-enhanced Raman spectroscopy (SERS) data are discussed. Our general findings are that all research groups obtained similar spectral patterns, irrespective of the setup or tip that was used. The TERS (and SERS) spectra consistently showed fewer bands than the conventional Raman spectrum. When comparing these three methods, the spectral pattern match and substance identification is readily possible. Absolute and relative peak positions of the three major signals of thiophenol scattered by 19 and 9 cm À1 , respectively, which can probably be attributed to different spectrometer calibrations. However, within the same group (but between different tips), the signals only scattered by 3 cm À1 on average. This study demonstrated the suitability of TERS as an analytical tool and brings TERS a big step forward to becoming a routine technique.
The peculiarities of the local oxidation process of
ultrathin amorphous titanium films by scanning probe microscope
are discussed. It is shown that the tip-induced oxidation
process can be considered as electrochemical anodic oxidation.
A model of the tip-induced oxidation kinetics is proposed. It
is shown that film resistance, relative humidity, applied
voltage and duration of oxidation are effects on the rate and
resolution of the process. The possibility of formation of 8 nm
oxide patterns by tip-induced oxidation is demonstrated.
The results of investigations of , thin films as prospective materials for conductive SPM probes in a silicon cantilever are presented. The ultrathin (1.5-10 nm) films are characterized by high conductivity, increased adhesion to silicon and chemical passivity. It is shown by means of conductive SPM measurements that there is no dielectric layer on the film surface and the conductive metal-coated silicon cantilevers were wear-proof.
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