Arrays of a few nanometer-size clusters have been realized using a porous silicon (PS) matrix by filling its pores with CdSe. The photoluminescence (PL) peak from the embedded area of the PS samples with different luminescence stabilizes at 1.79 eV. This has been interpreted as due to emission from the CdSe clusters with an average size of about 3–5 nm. Likewise, the PL and Raman scattering spectra of the pure PS area of the samples have been compared with those obtained from the embedded areas. PL spectra were examined as a function of laser irradiation. Finally, to analyze the possibility of the formation of metal/porous semiconductor contacts, cross-section structures have been observed by scanning electron microscopy in the electron-beam-induced current mode.
Abstract. Free-standing porous silicon films with high deuterium concentration have been fabricated. Optical properties of the freshly produced samples have been studied using infrared spectroscopy and photoluminescence. A detailed analysis ofphotoluminescence and infrared absorption spectra was performed. Changes in the optical and photoluminescence properties, modification of the surface states of porous silicon layers during their exposure in the ambient air have been studied.The precise value of the vibration frequencies of the silicon-deuterium modes were obtained. The estimated value of refractive index of the porous silicon samples with deuterium is a factor of 1.6 higher than that of the samples with hydrogen.
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