agree with those given in Kef. 10.The authors are grateful to V.N. Ishchenko and M.N. Skvortsov for valuable advice to V.P. Chebotaev for his interest and encouragement.Ί. M. Beterov, V. P. Chebotaev (Chebotayev), and A. S. Provorov, IEEE J. Quantum Electron.
A new circuit scheme, dual oxide thickness-multiple threshold voltage complementary metal oxide semiconductor (CMOS) (DOT-MTCMOS) which can suppress the stand-by tunnel leakage in ultra-thin gate oxide metal semiconductor field effect transistors (MOSFETs) is proposed. In this circuit, a power switch is inserted in series with CMOS circuits. The power switch consists of a high V th MOSFET with relatively thick gate oxide, in order to suppress not only subthreshold leakage but also tunneling leakage in the stand-by mode, while the CMOS circuit consists of low V th MOSFETs with ultra-thin gate oxide for the high speed and low voltage operation. Using this circuit scheme, we can utilize the high drive current of ultra-thin gate oxide MOSFETs in the future where the scaling limit of the gate oxide thickness will not be determined by the stand-by power. An application of this scheme to a low voltage operation, hence low power circuit, is also demonstrated.
The coupling of cutoff modes in nonlinear lattices is considered. It is shown that a novel class of lattice solitons is possible in the form of a coupled soliton-soliton or a coupled kink-soliton pair through a cross-phase modulation. Exact soliton solutions of coupled nonlinear amplitude equations for describing such a type of interacting nonlinear localized mode in lattices are presented and a macro-lattice experiment for their observation is suggested. Analytical results based on a quasi-discreteness approach are checked by numerical simulations.
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