I describe some of the principal landmarks coming up in the medium to long term future of observational extragalactic astronomy. Rather than attempting to compile an exhaustive catalogue, I have instead made a completely biased sample of some of the developments across the electromagnetic spectrum (including x-ray, optical, infra-red, submillimetre and radio) that seemed most exciting to me. Among the 'greatest hits' I have picked are XEUS, GAIA, NGST, OWL, ALMA and SKA.PACS numbers: 9555, 9862, 9880
Colour detection systems can be specified in terms of a set of spectral functions (colour-matching functions in the case of human observers). By taking these functions into account we define the characteristic matrix associated with a given colour detection system. This definition provides a new way to evaluate the differences and similarities between the colorimetric behaviour of two colour detection systems. We have applied this formalism to the case of a set of colour-matching functions associated with human observers. The differences between the diagonal terms, t ii , of the characteristic matrices associated with a given couple of observers provides us with information about the differences between their corresponding ith matching functions. The distance between two characteristic matrices, defined in terms of the norm, is a measure of the global difference between the colorimetric behaviour of the corresponding couple of associated observers. It seems to the authors that the characteristic matrix could play an important role in the characterization and design of colour detection and colour reproduction systems.
In the paper, for the first time, the effects of shallow trench isolation (STI) stress enhanced boron diffusion on band-to-band (BTBT) leakage and V ccmin of a 65 nm node low-power SRAM are investigated in detail. High temperature oxidation in the STI process induces an elastic stress to enhance the diffusion of boron dopants, thus leading to a significant increase in BTBT on the STI edge sidewall. The enhanced boron diffusion is more serious for a shorter and/or narrower device, thus worsening the mismatch of the threshold voltage and V ccmin of the devices in a 65 nm node SRAM cell significantly.
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