Abstract:A new circuit scheme, dual oxide thickness-multiple threshold voltage complementary metal oxide semiconductor (CMOS) (DOT-MTCMOS) which can suppress the stand-by tunnel leakage in ultra-thin gate oxide metal semiconductor field effect transistors (MOSFETs) is proposed. In this circuit, a power switch is inserted in series with CMOS circuits. The power switch consists of a high V th MOSFET with relatively thick gate oxide, in order to suppress not only subthreshold leakage but also tunneling leakage in the stan… Show more
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