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Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for a InAlAsAnGaAs metamorphic HEMT on a GaAs substrate. These devices have been used to design and fabricate microwave and millimeter wave amplifiers. Amplifier results will be presented.

This paper describes the design, fabrication, and performance of a 7.4 GHz to 8.4 GHz 3-stage PHEMT power amplifier. To the best of our knowledge, this amplifier has achieved the highest efficiency, power, and gain ever for a three-stage power amplifier at X Band.At a drain voltage of 6 volts, measured power added efficiency was between 50 YO to 60 YO with a CW power output of 35 dBm and an associated gain of 24 dB. The amplifier was stable over all measured biases and all drive levels.

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