A highly linear MESFET

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

“…A third-order intercept point, IP 3 , was determined to be 49.5 dBm. A linearity figure-ofmerit (LFOM : IP 3 =P DC ) was 45, which is comparable with the state-of-the art LFOM of a HBT (LFOM of 44) [15] and a spike-doped MESFET (LFOM of 50) [16]. The performance of power MESFET developed in this work is better than the previously recorded results in MESFET [7], namely output power of 31.6 dBm and 65% PAE at 3.5V and in heterojunction FET [6], output power of 31.4 dBm and 60% PAE at 3.0V.…”

Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs

“…In this work, we measured and then compared the power efficiency and linearity performance of 0.5 lm GaN/AlGaN HEMTs with 0.3 lm GaAs pHEMTs fabricated with a well matured GaAs technology. As presented later in this paper, even non-optimized GaN HEMT devices not only offer superior power density performance, but also better linearity at high power level with respect to stateof-the-art GaAs devices [13][14][15][16]. To our knowledge, there are not many studies where the power added efficiency/linearity performance of GaN HEMTs is compared with that of GaAs pHEMT devices.…”

High‐linear‐power MESFET devices using source‐degeneration inductance and input‐impedance mismatch

“…Linearity optimization involves many factors such as device-structure design, bias-point selection, input impedance, output impedance, feedback, and harmonic termination [1][2][3][4]. This paper describes the effects of source grounding and input-impedance matching on the linearity of a GaAs MESFET power device.…”