Articles you may be interested inPyroelectric-field driven defects diffusion along c-axis in ZnO nanobelts under high-energy electron beam irradiation J. Appl. Phys. 116, 154304 (2014); 10.1063/1.4898644
Deep level centers in silicon introduced by high-energy He irradiation and subsequent annealingThe n-type silicon crystals of about 0.15, 0.9, and 10 ncm (pulled material) and 120 ncm (float-zone material) are exposed to 2-9-MeV electron beams at total integrated fluxes up to about 10 18 electrons/cm 2 • The production rates of each complex defect in irradiated silicon are investigated. They are obtained from the condition of charge neutrality by using the experimental values of the resistivity as a function of bombardment dose. The electron energy dependence and the impurity density dependence of the production rate are determined for each complex defect. The results suggest that a configuration of the defect states at E, -0.3 eV may be associated with a phosphorus atom, and in the intrinsic region the two occupied and vacant states should be symmetrically located above and below the middle of the energy gap, respectively.
The radiation effects on semiconductors have been investigated extensively through the change in resistivity of semiconductors /1 to 5/. In order to obtain the exact equation of the resistivity-fluence relation we must know many factors such a s all the defect levels produced in irradiated semiconductgrs, their production rates, the probabilities of c a r r i e r s occupying them, and so on /2, 3/. It is, however, not easy to obtain the equations which predict the resistivity change with the fluence of particles, including all these factors.Buehler /4/ obtained the resistivity-fluence design curves for neutron-irra-Short Notes K15 /2/ B. SIGFRIDSSON and J.L. LINDSTROM, J. appl. Phys. -47, 4611 (1976).
A control method is studied to make an electron linear accelerator radiate accurately the required number of pulses of beam. Counting circuits are used to pre-set the number of pulses. All parts of the accelerator are operated in a fully warmed-up state. A magnetic shutter is placed between the electron gun and acceleration tube to control the radiation. The phase relation between the periodical operation of the accelerator and the starting time of switching is chosen to take away the error caused by the transient state of the shutter. The coincidence of the accelerating field and injected electrons are controlled also to diminish the effect of unexpected radiation due to the leakage of the electrons through the shutter.
The experiment shows that the beam radiation is reliably controlled by this method, e.g. the quantity of the electrons included in each pulse is kept constant independently of the required number of the pulses. There is no indication which suggests that the beams radiated are not homogeneous. The intensity of the leakageradiation is small enough and not detected even by an ion-chamber roentgenmeter.
A convenient integrator was developed for use in bombardment experiments with a charged particle accelerator such as a linac. In this device an irradiation dose is digitally displayed in the number of electrons per cm(2). Furthermore, a linac is controlled to deliver a preset dose by this integrator.
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