Empirical equations for predicting resistivity changes with fluence for electron-irradiated silicon

Abstract

The radiation effects on semiconductors have been investigated extensively through the change in resistivity of semiconductors /1 to 5/. In order to obtain the exact equation of the resistivity-fluence relation we must know many factors such a s all the defect levels produced in irradiated semiconductgrs, their production rates, the probabilities of c a r r i e r s occupying them, and so on /2, 3/. It is, however, not easy to obtain the equations which predict the resistivity change with the fluence of particles, including all these factors.Buehler /4/ obtained the resistivity-fluence design curves for neutron-irra-Short Notes K15 /2/ B. SIGFRIDSSON and J.L. LINDSTROM, J. appl. Phys. -47, 4611 (1976).