Complex defects introduced into Si by high-energy electron irradiation: Production rates of defects in n-Si

Wada, Takahiro; Yasuda, Kimihiko; Ikuta, S.; Takeda, Michihiko; Masuda, Hideyuki

doi:10.1063/1.324032

Cited by 46 publications

(4 citation statements)

References 19 publications

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“…In this connection one should mention the level ∼E c − 0.30 eV tentatively attributed to the phosphorus-vacancy pair including a hydrogen atom (s) in proton-irradiated of n-type silicon [49]: the data of these DLTS experiments suggest that this level belongs to the negatively charged deep donor center. Also, earlier the deep donor centers were supposed to be observed in DLTS experiments on 9 MeV electron irradiation of n-type silicon [50].…”

Section: Deep Donors and Electrical Activity Of Phosphorus Atoms In P...mentioning

confidence: 92%

Positron annihilation on defects in silicon irradiated with 15 MeV protons

Arutyunov¹,

Elsayed²,

Krause‐Rehberg³

et al. 2012

J. Phys.: Condens. Matter

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Microstructure and thermal stability of the radiation defects in n-FZ-Si ([P] ≈ 7 × 10(15) cm(-3)) single crystals have been investigated. The radiation defects have been induced by irradiation with 15 MeV protons and studied by means of both the positron lifetime spectroscopy and low-temperature measurements of the Hall effect. At each step of the isochronal annealing over the temperature range ∼60-700 °C the positron lifetime has been measured for the temperature interval ∼30-300 K, and for samples-satellites the temperature dependences of the charge carriers and mobility have been determined over the range ∼4.2-300 K. It is argued that as-grown impurity centers influence the average positron lifetime by forming shallow (E(b) ≈ 0.013 eV) positron states. The radiation-induced defects were also found to trap positrons into weakly bound (E(b) ≤ 0.01 eV) states. These positron states are observed at cryogenic temperatures during the isochronal annealing up to T(anneal.) = 340 °C. The stages of annealing in the temperature intervals ∼60-180 °C and ∼180-260 °C reflect the disappearance of E-centers and divacancies, respectively. Besides these defects the positrons were found to be localized at deep donor centers hidden in the process of annealing up to the temperature T(anneal.) ≈ 300 °C. The annealing of the deep donors occurs over the temperature range ∼300-650 °C. At these centers positrons are estimated to be bound with energies E(b) ≈ 0.096 and 0.021 eV within the temperature intervals ∼200-270 K and ∼166-66 K, respectively. The positron trapping coefficient from these defects increases from ∼1.1 × 10(16) to ∼6.5 × 10(17) s(-1) over the temperature range ∼266-66 K, thus substantiating a cascade phonon-assisted positron trapping mechanism whose efficiency is described by ≈T(-3) law. It is argued that the value of activation energy of the isochronal annealing E(a) ≈ 0.74-0.59 eV is due to dissociation of the positron traps, which is accompanied by restoration of the electrical activity of the phosphorus atoms. The data suggest that the deep donors involve a phosphorus atom and at least two vacancies. Their energy levels are at least at E > E(c) - 0.24 eV in the investigated material.

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Section: Deep Donors and Electrical Activity Of Phosphorus Atoms In P...mentioning

confidence: 92%

Positron annihilation on defects in silicon irradiated with 15 MeV protons

Arutyunov¹,

Elsayed²,

Krause‐Rehberg³

et al. 2012

J. Phys.: Condens. Matter

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“…It should be noted that DLTS measure ments revealed deep donor centers at ~E c -0.30 eV in proton irradiated n Si [34]. Earlier it was believed that similar complexes may be formed in electron irradi ated n Si, too [35].…”

Section: Electron Irradiation Of N Sic (4h)mentioning

confidence: 91%

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

et al. 2012

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Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n Si grown by the floating zone (FZ) technique and n SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation produced defects with involvement of V group impurities differ dramatically in electron and proton irradiated n Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In con trast, DLTS spectra taken on electron and proton irradiated n SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n SiC (4H) were found to be considerably smaller than those in n Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.

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“…~ 300 °C (these data will be discussed elsewhere). It will be noted that the formation of deep donor levels at E ~ E c -0.30 eV was detected by DLTS in n-type silicon irradiated by MeV protons [8]; also, earlier it was believed that a similar complexes may be formed in silicon of n-type irradiated by high-energy electrons [9].…”

mentioning

confidence: 90%

Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals

Arutyunov

Elsayed

Krause‐Rehberg

et al. 2015

SSP

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We observed for the first time the thermally stable point positron-sensitive center of a vacancy type in n–FZ–Si (P) material irradiated at RT by ~ 0.9-MeV electrons. The center that emerges after isochronal annealing at Tanneal.≈ 260 – 280 oC is found to be similar to the vacancy-group-V-atom complex revealed in the same Si material irradiated by 15-MeV protons; the detecting of the centers by the positron trapping is finalized at Tanneal.≥ 520 oC. The annihilation gamma-quanta to be emitted from the positron trap gives rise to a characteristic positron lifetime τ2 (I2 ~ 38–19 %) ≤ 276 – 294 ps which is somewhat longer than the one predicted for unrelaxed single vacancy τV.≈ 254 – 261 ps. Our data suggested a configuration of the complex VopPVop, wherein the atom of phosphorus is tied to a split open vacancy volume 2Vop. It is argued that Vop volume detected by the positron trapping may be formed by extended semi-vacancy, Vs-ext , or by the relaxed inwards vacancy, Vinw , thus resulting in a distorted Vs-extPVs-ext or VinwPVinw configurations.

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Complex defects introduced into Si by high-energy electron irradiation: Production rates of defects in n-Si

Cited by 46 publications

References 19 publications

Positron annihilation on defects in silicon irradiated with 15 MeV protons

Positron annihilation on defects in silicon irradiated with 15 MeV protons

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in <i>n–</i>FZ<i>–</i>Si:P Crystals

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