Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

Abstract

Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n Si grown by the floating zone (FZ) technique and n SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation produced defects with involvement of V group impurities differ dramatically in electron and proton irradiated n Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In con trast, DLTS spectra taken on electron and proton irradiated n SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n SiC (4H) were found to be considerably smaller than those in n Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

“…A similar production rate of displacement for ~25 MeV protons was obtained earlier in 1948 [18]. The production rates of Frenkel pairs were recently estimated using Hall measurements for 8 MeV and 15 MeV proton irradiation of silicon by Emtsev et al [19]. On the one hand, all these data are an evidence of a dominance of elastic scattering of 25 to 50 MeV protons.…”

In-Situ Study of Silicon Single Crystals Conductivity under Electron Irradiation

“…The observed level of 0.66 eV is near Ec 0.65 eV and was identified after electron irradiation of Si by electrons with energy 10 MeV [15]. Apart from known A-centres, (interstitial oxygen atom + Si-vacancy) and E-centres (donor atom + Si-vacancy), new centres with Ес 0.33 eV; Ес 0.40 eV and Ес 0.22 eV have been found and studied in literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The first one is connected with interstitial Si atom, the second one corresponds to bi-vacancy and the third one is identified as bi-vacancy + oxygen (C-centre) [1,3,7,8].…”

“…After irradiation by dose of 4 × 10 15 el/cm 2 the following activation energies of RD are calculated 0.395 eV; 0.53 eV in n-Si and 0.56 eV; 0.66 eV in p-Si which stimulate conductivity because the carriers' mobility has a weak dose dependence. Among many known energetic levels in Si [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] corresponding to different RD, Figures 2-4 present energetic levels, which are identified to defined levels in literature. For example, the observed level of 0.395 eV can be classified as E-center with location on Ec 0.4 eV in the forbidden gap of Si [7][8][9]12,13], i.e.…”

“…There are numerous investigations concerning the influence of irradiations on the properties of solid states (including silicon) which are carried out before and after irradiation [for example [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The works on studying the properties of solid states directly under the irradiation process are very scarce [15][16][17][18][19][20].…”

Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

“…Although such phenomena have been the subject of numerous previous studies (for example [1]- [6]), there is a lack of detail available regarding the kinetics and accumulation rates for the interactions of impurity atoms with interstitial Si-self atoms (I) and their vacancies (V), i.e. Frenkel pairs, which are induced by the radiation in the Si crystal, in particular, by means of ultrafast radiation-pulses.…”