In this Letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers: a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electron spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by the field effect.

The diverse phenomena associated with the two-dimensional electron gas (2DEG) that occurs at oxide interfaces include, among others, exceptional carrier mobilities, magnetism and superconductivity. Although these have mostly been the focus of interest for potential future applications, they also offer an opportunity for studying more fundamental quantum many-body effects. Here, we examine the magnetic-field-driven quantum phase transition that occurs in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through a finite-size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting puddles coupled by a 2DEG and, depending on its conductance, the observed critical behaviour is single (corresponding to the long-range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). A phase diagram illustrating the dependence of the critical field on the 2DEG conductance is constructed, and shown to agree with theoretical proposals. Moreover, by retrieving the coherence-length critical exponent ν, we show that the quantum critical behaviour can be clean or dirty according to the Harris criterion, depending on whether the phase-coherence length is smaller or larger than the size of the puddles.

TinCn−1Tx2D-sheets are functionalized using a new etching environment allowing the modification of their surface chemistry and production of rationalized TiO2@MXene nanocomposites.

MXenes are a new, and growing, family of 2D materials with very promising properties for a wide variety of applications. Obtained from the etching of MAX phases, numerous properties can be targeted thanks to the chemical richness of the precursors. Herein, we highlight how etching agents govern surface chemistries of Ti 3 C 2 T x , the most widely studied MXene to date. By combining characterization tools such as X-ray diffraction, X-ray photoelectron, Raman and electron energy loss spectroscopies, scanning and transmission electron microscopies and a surface sensitive electrochemical reactionthe hydrogen evolution reaction, HERwe clearly demonstrate that the etching agent (HF, LiF/HCl or FeF 3 /HCl) strongly modifies the nature of surface terminal groups (F, OH and/or O), oxidation sensitivity, delamination ability, nature of the inserted species, interstratification, concentration of defects and size of flakes. Beyond showing how using these different characterization tools to analyze MXenes, this work highlights that the MXene synthesis routes can influence targeted applications.

In LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, the bending of the SrTiO3 conduction band at the interface forms a quantum well that contains a superconducting two-dimensional electron gas (2-DEG). Its carrier density and electronic properties, such as superconductivity and Rashba spin-orbit coupling can be controlled by electrostatic gating. In this article we show that the Fermi energy lies intrinsically near the top of the quantum well. Beyond a filling threshold, electrons added by electrostatic gating escape from the well, hence limiting the possibility to reach a highly-doped regime. This leads to an irreversible doping regime where all the electronic properties of the 2-DEG, such as its resistivity and its superconducting transition temperature, saturate. The escape mechanism can be described by the simple analytical model we propose.

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous superconductivity resulting from percolation of filamentary structures of superconducting "puddles" with randomly distributed critical temperatures, embedded in a nonsuperconducting matrix. Following the evidence that superconductivity is related to the appearance of high-mobility carriers, we model intrapuddle superconductivity by a multiband system within a weak coupling BCS scheme. The microscopic parameters, extracted by fitting the transport data with a percolative model, yield a consistent description of the dependence of the average intrapuddle critical temperature and superfluid density on the carrier density

The MXenes, among which Ti 3 C 2 T x is the most studied, are a large family of 2D materials with proven potential in a variety of application fields (e.g., energy storage and conversion, water purification, electromagnetic interference shielding, humidity sensor, etc). For most of these applications, MXenes properties depend, at least partly, on their water sorption ability and on the induced structural swelling, which is commonly considered a stepwise process, like in clay-like materials. In the present study, we rather evidence the systematic coexistence of different hydrates in MXene interstratified crystals. Hydration heterogeneity and related structure disorder are described from the quantitative analysis of X-ray diffraction data. This specific methodological approach allows disentangling the complex interstratification and rationalizing the prediction of MXene electrical properties. The widespread use of this approach paves the way for a systematic and thorough determination of MXene structure, including order-disorder, and thus for grasping the influence of structural disorder (hydration heterogeneity) on a large number of MXene physical properties (e. g. optical transparency, capacitance). Deciphering this complex structural disorder is also essential in the design of new MXene-based materials for a variety of applications (supercapacitors, batteries, water treatment…).