Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

Hurand, S.; Jouan, A.; Feuillet-Palma, C.; Singh, Gyanendra; Biscaras, Johan; Lesne, Edouard; Reyren, Nicolas; Barthélémy, A.; Bibès, Manuel; Villegas, Javier E.; Ulysse, C.; Lafosse, Xavier; Pannetier‐Lecœur, M.; Caprara, S.; Lesueur, J.; Bergeal, N.

doi:10.1038/srep12751

Cited by 97 publications

(124 citation statements)

References 32 publications

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“…To investigate this scenario, we fit the curves with the Maekawa-Fukuyama formula [red lines in Fig. 2(b)] in a diffusive regime that describes the change in the conductivity with magnetic field with negligible Zeeman splitting [35]. The extracted parameters B φ and B so are the effective fields related to the inelastic and spin-orbit relaxation lengths, respectively.…”

Section: Spin-orbit Semimetal Sriro 3 In the Two-dimensional Limitmentioning

confidence: 99%

Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

Groenendijk

Autieri²,

Girovský

et al. 2017

Phys. Rev. Lett.

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We investigate the thickness-dependent electronic structure of ultrathin SrIrO 3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO 3 is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO 3 is accompanied by antiferromagnetic order.

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Section: Spin-orbit Semimetal Sriro 3 In the Two-dimensional Limitmentioning

confidence: 99%

Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

Groenendijk

Autieri²,

Girovský

et al. 2017

Phys. Rev. Lett.

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“…28 ) and m*2m0 (m0=9.110 31 kg) puts R on the order of 110 -12 eVm. This is in the range of calculated values 29 and compatible with R=2.6-3.5 10 -12 eVm extracted from weak antilocalization (WAL) magnetoresistance data 13,30 (we note however that WAL treats spin-orbit coupling as a perturbation instead of considering a spin-momentum locking as is the case in the IEE).…”

mentioning

confidence: 99%

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

Lesne¹,

Fu²,

Oyarzún³

et al. 2016

Nature Mater

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449

428

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The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE) 1-3 . The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities 4,5 and devices, some of which do not require any ferromagnetic material 6 . However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero-and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism  the Rashba effect 7  in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES. Perovskite oxide materials possess a broad range of functionalities, some of which can be very appealing for spintronics. This includes half-metallicity in mixed-valence manganites  that can be used to produce giant tunnel magnetoresistance 8  or multiferroicity  through which magnetization direction can be electrically controlled at low power 9 . The recent years have seen the emergence of novel spintronics effects based on the generation and control of pure spin currents through spin-orbit effects in semiconducting and metallic systems 1-3 . However, despite a renewal of interest for 4d and 5d transition metal perovksites 10 , spin-orbit effects remained largely unexplored in oxide spintronics.An emerging direction in oxide research aims at discovering novel electronic phases at interfaces between two oxide materials 11 . A well-known example is the LaAlO3/SrTiO3 system: while both LaAlO3 (LAO) and SrTiO3 (STO) are wide bandgap semiconductors, a high-mobility two-dimensional electron system (2DES) forms at their interface 12 if the LAO thickness is at least 4 unit-cells (uc). Interestingly, LAO/STO possesses several remarkable extra functionalities including a gate-tuneable Rashba effect 13,14 , which makes it particularly appealing for spintronics.The Rashba effect is a manifestation of the spin-orbit interaction (SOI) in solids, where spin degeneracy associated with the spatial inversion symmetry is lifted due to a symmetry-breaking electric field normal to an heterointerface 15 . In a Rashba 2DES, the flow of a charge current results in the creation of a nonzero spin accumulation 16,17 coming from uncompensated spin-textured Fermi surfaces. Recently, the converse effect so-called inverse Edelstein effect (IEE)  that is a spin-to-charge conversion through SOI  was discovered a...

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“…The Hamiltonian (1), which has been extensively used in the study of the 2DEG in semiconducting systems, has been recently applied also to interface states between different metals [7] and between two insulating oxides [9][10][11][12]. In the latter systems, higher mobilities, carrier concentration and SOC strengths have led to the expectation of observing stronger SOC-induced effects.…”

mentioning

confidence: 99%

Intrinsic spin Hall effect in systems with striped spin-orbit coupling

Seibold

Caprara

Raimondi

2015

EPL

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The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show that in the presence of strong disorder, nonhomogeneity in the spin-orbit coupling gives rise to a finite spin Hall conductivity in contrast with the corresponding case of a homogeneous linear spin-orbit coupling. In particular, we examine the inhomogeneity arising from a striped structure for a two-dimensional electron gas, affecting both density and Rashba spin-orbit coupling. We suggest that this situation can be realized at oxide interfaces with periodic top gating.

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Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

Cited by 97 publications

References 32 publications

Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

Spin-Orbit Semimetal SrIrO3 in the Two-Dimensional Limit

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

Intrinsic spin Hall effect in systems with striped spin-orbit coupling

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