Articles you may be interested inAll-organic thin-film transistors made of poly(3-butylthiophene) semiconducting and various polymeric insulating layers
We have fabricated fully patterned all-organic thin-film transistors on polyimide substrates using selectively electropolymerized poly (3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate) (PEDOT:PSS) for the source and drain contacts, PEDOT:PSS Baytron P dispersion for the gate electrodes, poly (4-vinyl phenol) or polyvinyl alcohol for the gate dielectric layers, and pentacene or poly (3-butylthiophene) for the organic active layers. We have built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.01 cm2/V s were measured. Functional all-organic transistors have been realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes and that allows the preparation of feature sizes on the micrometer scale.
A simple continuously tunable laser-pumped dye laser is described. A dye solution in contact with a lateral face of a right-triangular 90° prism, adjacent to the 90° corner, is pumped by laser light incident on the lateral face opposite to the 90° corner. A standing-wave pump field is produced in the dye solution by the interference between the pump light that passes directly to the inner face in contact with the dye solution and the pump light internally reflected from the other lateral face adjacent to the 90° corner. The output wave-length is determined by the spatial periodicity of the standing-wave field and is easily varied by changing the angle of incidence between the pump-laser beam and the prism face.
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