Vertical channel all-organic thin-film transistors

Parashkov, R.; Becker, E.; Hartmann, S.; Ginev, G.; Schneider, Daniel; Krautwald, Henning; Dobbertin, T.; Metzdorf, D.; Brunetti, Fulvio G.; Schildknecht, Christian; Kammoun, A.; Brandes, M.; Riedl, Thomas; Johannes, H.‐H.; Kowalsky, Wolfgang

doi:10.1063/1.1584786

Cited by 58 publications

(38 citation statements)

References 12 publications

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“…Using the latter route, artificial thin film structures have been obtained for growth of hexabenzocoronene 6 on metal surfaces revealing a cofacial -stacking of the planar molecules which is of great interest for the fabrication of vertical thin-film OFET structures. 7 In view of these considerations, recent scanning tunneling microscopy (STM) results 8 reported by Kang and Zhu have attracted some attention. From the STM data, it was concluded that on Au substrates, organic molecular-beam deposition (OMBD) of pentacene leads to the growth of thin pentacene adlayers with a structure different from that of the bulk, namely with all molecular planes orientated parallel to the substrate.…”

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confidence: 99%

Importance of dewetting in organic molecular-beam deposition: Pentacene on gold

Beernink

Strunskus

Witte

et al. 2004

Applied Physics Letters

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Organic molecular-beam deposition of pentacene on gold substrates has been investigated using a multitechnique approach. The morphology of the organic thin films depends strongly on the substrate temperature. Pronounced dewetting and island formation are observed at room temperature. Whereas pentacene molecules adopt a planar monolayer structure, they continue to grow in an upright orientation in multilayer films as inferred from x-ray absorption spectroscopy and atomic force microscopy. These results are in pronounced contrast to a recent scanning tunneling microscopy (STM) study by Kang and Zhu [Appl. Phys. Lett. 82, 3248 (2003)] and indicate fundamental problems in the interpretation of STM measurements for organic thin films.

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confidence: 99%

Importance of dewetting in organic molecular-beam deposition: Pentacene on gold

Beernink

Strunskus

Witte

et al. 2004

Applied Physics Letters

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“…4,5 Some approaches to enhance the OFETs' performance, such as decreasing the channel length and increasing the dielectric constant of the gate dielectrics, have been reported. [6][7][8][9][10][11] However, the performance is still quite limited. In this letter, we demonstrate an organic field effect transistor that utilizes a vertically stacked structure with promising performance.…”

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confidence: 99%

Unique architecture and concept for high-performance organic transistors

Yang

2004

Applied Physics Letters

164

147

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We report an organic transistor with a vertically stack structure, which consists of a layer-by-layer active cell (drain/organics/source) on top of a capacitor cell (source/dielectrics/gate); the middle source electrode is shared by the capacitor cell and active cell. Three unique characteristics of this transistor, (a) its very thin and rough middle source electrode; (b) its capacitor cell with high charge-storage capability, allow the active cell to be influenced when the gate is biased; and (c) the large cross-section area and small distance between the source and the drain allow current flowing between the source and drain electrodes. Devices have been fabricated by thermal evaporation with the source-drain current well modulated by the gate potential. We have achieved organic transistors with low working voltage (less than 5V) and high current output (up to 10mA or 4A∕cm2) and an ON/OFF ratio of 4×106. A model is proposed for the device operation mechanism. The demonstrated device with its enhanced operating characteristics may open directions for organic transistors and their applications.

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“…͑1͒, mobility is estimated to be 0.30 cm 2 / V s, which is still less than the typical value ϳ1.0 cm 2 / V s for the lateral devices prepared at the same time for a reference. It is to be emphasized that the achieved on-off ratio is outstanding as compared with various vertical OFETs reported previously, [13][14][15] in which the ratios are less than ϳ10 4 . As compared with these vertical transistors, the present 3D-OFETs are reproducing more ideal vertical MIS structure, in which the semiconductor channel and the gate electrode are facing well with each other and the source and the drain electrodes are explicitly separated by the semiconductor.…”

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confidence: 86%