We report on the lattice relaxation mechanism of ZnO films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1μm), the residual tensile strain begins to relax by bending and microcrack formation.

We report the structural and optical properties of one-dimensional grating of ZnO consisting of periodically polarity inverted structures on (0001) Al2O3 substrates. The inversion domain boundaries (IDBs) between the Zn- and the O-polar ZnO regions were clearly observed by transmission electronic microscopy. The investigation of spatially resolved local photoluminescence (PL) revealed strong excitonic emission at the interfacial region including the IDBs. The possible mechanism of strong PL has been discussed by the consideration of atomic configuration and carrier collection including its lifetime and diffusion process in Zn- and O-polar regions. Therefore the authors conclude that the IDBs can be active for the strong emission not a nonradiative center.

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In doped ZnO nanorods ( ZnO : In NRs) were grown on Si (111) substrates by using AuGe as a catalyst. In-concentration was controlled as high as 0.33 at.%. The length L to diameter D relationship of NRs revealed that the growth mechanism should be explained in terms of not a simple vapor–liquid–solid (VLS) mechanism but a diffusion-induced growth model. In-induced changes have been investigated from the viewpoint of photoluminescence (PL) property. At room temperature, an increase of extrinsic carrier concentration and interaction with excitons were estimated from the blueshift of peak position and decrease of luminescence intensity. Also, narrow linewidth of low-temperature PL spectra characterized the high structural quality of ZnO : In NRs. We have assigned several PL lines and confirmed the assignment by using excitation power and temperature dependence PL. Considerable evidence of crystal quality degradation was not observed from both measurements; however, we could observe that a defect and donor-bound-exciton complex dominate the PL spectrum. ZnO : In NRs shows good optical quality within our experimental range, and this result strongly supports the feasibility of In -doping to enhance the electrical property of ZnO -based nanostructure.

Hydrogen-assisted molecular beam epitxy of ZnO on Zn-polar ZnO is achieved using atomic hydrogen. Exposure of atomic H helps to grow high-quality ZnO layers on Zn-polar ZnO substrates even at a low temperature of 400 o C. The full width at half maximum values of X-ray rocking curves for ZnO epilayers are as narrow as 64 arcsec and 60 arcsec for (0002) and (10-11) diffractions.