We report on GaN n-type doping using silane, germane, and isobutylgermane as Si and Ge dopants, respectively. A significant increase in tensile stress during growth is observed for Si doped samples while this is not the case for Ge doping. In addition, Ge can be doped up to 2.9 Â 10 20 cm À3 , while Si doping leads to 3-D growth already at concentrations around 1.9 Â 10 19 cm À3. The free carrier concentration was determined by Hall-effect measurements, crystal quality, and structural properties by x-ray diffraction measurements. Additionally, secondary ion mass spectroscopy and Raman measurements were performed demonstrating the high material quality of Ge doped samples. V

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We present an experimental study on the near-field light-matter interaction by tip-enhanced Raman scattering (TERS) with polarized light in three different materials: germanium-doped gallium nitride (GaN), graphene, and carbon nanotubes. We investigate the dependence of the TERS signal on the incoming light polarization and on the sample carrier concentration, as well as the Raman selection rules in the near-field. We explain the experimental data with a tentative quantum mechanical interpretation, which takes into account the role of plasmon polaritons, and the associated evanescent field. The driving force for the breakdown of the classical Raman selection rules in TERS is caused by photon tunneling through the perturbation of the evanescent field, with the consequent polariton annihilation. Predictions based on this quantum mechanical approach are in good agreement with the experimental data, which are shown to be independent of incoming light polarization, leading to new Raman selection rules for TERS.

We present an experimental study about the influence of Si and Ge doping in GaN with focus on the occurring strain levels and overall crystalline quality. Extremely high quality samples were examined by means of Raman spectroscopy, demonstrating effective, n‐type doping concentrations up to the 5 × 1019 cm–3 regime. By studying the full width at half maximum (FWHM) of the E2(high) Raman mode with rising doping concentration, Ge is approved as the by far superior dopant if compared to Si. Even elevated nominal Ge concentrations yield corresponding FWHM values of just 3 cm–1, a most competitive value even for bare bulk GaN samples. At the same time, the biaxial, compressive stress that is introduced by such high Ge doping amounts to just 0.2 GPa, in clear contrast to the particular case of silicon. Here, even moderate doping levels lead to tensile stress up to 1 GPa and consequently to a serious degeneration of the overall crystal quality as approved by our Raman analysis. Additionally, the examined high doping concentrations enable the observation of longitudinal optical phonon plasmon (LPP) modes in the Raman spectra, which serve as a direct tool for the determination of the effective doping concentration. A careful analysis of the LPP coupling at cryogenic and room temperature yields within the error interval identical free carrier concentrations in all germanium doped samples, pointing towards an energetically shallow nature of the dopant. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

GaN growth on silicon has recently found its way into products as transistor devices for high frequencies and high‐voltage applications as well as for light emitting diodes (LEDs). Here, we present the importance of high quality GaN layers for growing LED structures and high‐voltage transistors on silicon. The major difference is that LED growth on silicon substrates suffers from edge type dislocations during silicon doping while FETs suffer from a lowered breakdown field. We will show that the latter is most likely originating in screw type dislocations. By optimizing GaN material quality the breakdown field strength can be doubled from less than 0.7x106 V/cm up to ∼ 1.5x106 V/cm. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)