Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mn>20</mml:mn></mml:msup><mml:mi> </mml:mi><mml:mi mathvariant="normal">cm</mml:mi><mml:msup><mml:mrow /><mml:mrow><mml:mo>−</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msup></mml:math>

Feneberg, Martin; Osterburg, Sarah; Lange, Karsten; Lidig, Christian; Garke, B.; Goldhahn, R.; Richter, E.; Netzel, Carsten; Neumann, M.; Esser, N.; Fritze, S.; Witte, Hartmut; Bläsing, J.; Dadgar, A.; Krost, A.

doi:10.1103/physrevb.90.075203

Cited by 147 publications

(93 citation statements)

References 46 publications

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“…This feature could be used to tune the transparency of GaN in the 1-7 µm spectral range. In general, the free carrier absorption is a well-known phenomenon in semiconductors which has been also observed for n-type GaN [13][14][15][20][21][22]. In order to compare our experimental results Figure 3a shows transmission spectra measured at room temperature for GaN crystals doped by oxygen with various concentrations of free electrons.…”

Section: Resultsmentioning

confidence: 72%

“…In general, the free carrier absorption is a well-known phenomenon in semiconductors which has been also observed for n-type GaN [13][14][15][20][21][22]. In order to compare our experimental results In general, the free carrier absorption is a well-known phenomenon in semiconductors which has been also observed for n-type GaN [13][14][15][20][21][22]. In order to compare our experimental results with a quantitative analysis, the plasma frequency (ω P ) has been calculated for various carrier concentrations according to Equation (2)…”

Section: Resultsmentioning

confidence: 91%

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Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

et al. 2017

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GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n-and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to~1 µm at n~10 20 cm −3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1-10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10 18 cm −3 are highly transparent with the absorption coefficient below 3 cm −1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

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Section: Resultsmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 91%

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

et al. 2017

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“…It has been successfully used to produce films with free electron concentration higher than 10 19 cm À 3 . However, a considerable modification of the fundamental material parameters is often observed in heavily doped films [4,5]. Further improvements in high performance of GaN-based devices call hence for an accurate and systematic understanding of basic physical modification undergone by the material due to doping.…”

Section: Introductionmentioning

confidence: 99%

“…GaN is the object of an increasing interest in the last few years owing to its potential applications in electronic and optoelectronic fields [1][2][3][4]. For the design and realization of GaN-based devices, high carrier concentration with a controlled and reproducible n-or p-type doping is needed [4].…”

Section: Introductionmentioning

confidence: 99%

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Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Bouzidi

Benzarti

Halidou

et al. 2016

Materials Science in Semiconductor Processing

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Revealing Unusual Bandgap Shifts with Temperature and Bandgap Renormalization Effect in Phase‐Stabilized Metal Halide Perovskite Thin Films

Zhang,

Bi,

Zhai

et al. 2023

Adv Funct Materials

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Hybrid organic–inorganic metal halide perovskites are emerging materials in photovoltaics, whose bandgap is one of the most crucial parameters governing their light‐harvesting performance. This work presents the temperature and photocarrier density dependence of the bandgap in two phase‐stabilized perovskite thin films (MA0.3FA0.7PbI3 and MA0.3FA0.7Pb0.5Sn0.5I3) using photoluminescence and absorption spectroscopy. Contrasting bandgap shifts with temperature are observed between the two perovskites. Using X‐ray diffraction and in situ high‐pressure photoluminescence spectroscopy, it is shown that thermal expansion plays only a minor role in the large bandgap blueshift, which is attributed to the enhanced structural stability of the samples. The first‐principles calculations further demonstrate the significant impact of thermally induced lattice distortions on the bandgap widening. It is proposed that the anomalous trends are caused by the competition between static and dynamic distortions. Additionally, both the bandgap renormalization and band‐filling effects are directly observed for the first time in fluence‐dependent photoluminescence measurements and are employed to estimate the exciton effective mass. The results provide new insights into the basic understanding of thermal and charge‐accumulation effects on the band structure of hybrid perovskite thin films.

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Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3

Cited by 147 publications

References 46 publications

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Revealing Unusual Bandgap Shifts with Temperature and Bandgap Renormalization Effect in Phase‐Stabilized Metal Halide Perovskite Thin Films

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