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Low temperature dependence of resistivity is studied in strongly interacting, dilute 2D GaAs hole systems in presence of magnetic field. Electrical resistivity was analyzed showing the contributions of quantum effects to the transport mechanism. Experimental results are compared with available theoretical models, and physical arguments are given to explain the behaviour of the electrical resistivity with temperature and magnetic field.

We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moment