Density inhomogeneity driven metal–insulator transition in 2D p-GaAs

Dlimi, S.; kaaouachi, A. El; Narjis, A.

doi:10.1016/j.physe.2013.07.001

Cited by 12 publications

(11 citation statements)

References 32 publications

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“…5. In agreement with the previously obtained data, it increases weakly when the density decreases, being close to the value (B sat )/ (0) = 4 predicted by the theory of spin-polarization-dependent screening of a random potential [17,18].…”

Section: Resultssupporting

confidence: 91%

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Dlimi

kaaouachi

Limouny

et al. 2014

AIP Conference Proceedings

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Abstract. In the ballistic regime where k B T / 1, the temperature dependence of the metallic conductivity in a twodimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization, but reappears again in the fully spinpolarized state, being, however, suppressed relative to the zero magnetic field case. The analysis of the degree of suppression can distinguish between screening and interaction-based theories. We show that in a fully polarized spin state, the effects of disorder are dominant and approach a strong localization regime, which is contrary to the behavior of 2D electron systems in a weakly disordered unpolarized state. It was found that the elastic relaxation time correction, depending on the temperature, changed significantly with the degree of spin polarization, to reach a minimum just below the start of the spin-polarized integer, where the conductivity is practically independent of temperature.

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Section: Resultssupporting

confidence: 91%

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Dlimi

kaaouachi

Limouny

et al. 2014

AIP Conference Proceedings

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“…4 and 5, we have obtained values of the exponent close to 1/2 and far from 1/3 which allows us, on the one hand, to exclude the Mott hopping mechanism where the hopping is assisted by phonons [10,[14][15] and, on the other hand, to confirm the existence of the Efros-Shklovskii hopping where the hopping is assisted by electrons. The exponent depends on the density, in fact, the more the density approaches the critical density of the insulator-metal transition which is estimated at n pc = 4.6 × 10 10 cm -2 [6,19], the more the exponent increases and tends towards the value = 1 that is characteristic of a hopping mechanism of the activated type [20].…”

Section: Resultsmentioning

confidence: 99%

Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Dlimi¹,

Limouny²,

Hemine³

et al. 2020

Lith. J. Phys.

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We have investigated the resistivity of a 2D hole system in GaAs in the temperature range 200 mK < T < 800 mK at zero magnetic field and low hole densities when the system is near the metal–insulator transition in the insulating side. We have found that the resistivity follows the Efros–Shklovskii variable range hopping (ES-VRH) law, this behaviour is consistent with the existence of a Coulomb gap. The resistivity scales with temperature and the prefactor has been found independent of temperature and density, thus confirming the dominance of hole–hole interaction.

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“…If the conductivity σ 0 < e 2 h , the system becomes highly localized. On the other hand, in the presence of interactions characterized by the parameter r s = E in /E kin [13][14][15] (E kin is the kinetic energy and E in the interaction energy), only k F l e is a good parameter for characterizing the importance of the disorder. For an electron system of density n in dimension d, k F ∝ n 1/d , and thus the strength of the effective disorder increase as the electron density is decreased.…”

Section: Theorymentioning

confidence: 99%

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

Dlimi

kaaouachi

2020

J. Korean Phys. Soc.

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We report the magneto-conductivity in a disordered 2D p-SiGe quantum well with interactions, which allows the weak anti-localization and the Zeeman effect to be ignored. The results seem to be quantitatively explainable in the context of theories on quantum corrections of a strongly interacting two-dimensional system. Analysis of the results provided Fermi constant values between −0.5 and −0.8 and the Landé g-factor values between g * = 0.71 and g * = 0.85. In this system, a magnetic field strong enough to polarize the system induces a magneto-conductance and destroys the metallic state, implying that the spin state is responsible for the conductance of the metallic state, which is in accordance with several works in this framework.

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Density inhomogeneity driven metal–insulator transition in 2D p-GaAs

Cited by 12 publications

References 32 publications

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

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