Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Dlimi, S.; Limouny, L.; Hemine, J.; Echchelh, Adil; kaaouachi, A. El

doi:10.3952/physics.v60i3.4303

Cited by 13 publications

(3 citation statements)

References 18 publications

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“…If the conductivity σ 0 < e 2 h , the system becomes highly localized. On the other hand, in the presence of interactions characterized by the parameter r s = E in /E kin [13][14][15] (E kin is the kinetic energy and E in the interaction energy), only k F l e is a good parameter for characterizing the importance of the disorder. For an electron system of density n in dimension d, k F ∝ n 1/d , and thus the strength of the effective disorder increase as the electron density is decreased.…”

Section: Theorymentioning

confidence: 99%

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

Dlimi

kaaouachi

2020

J. Korean Phys. Soc.

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We report the magneto-conductivity in a disordered 2D p-SiGe quantum well with interactions, which allows the weak anti-localization and the Zeeman effect to be ignored. The results seem to be quantitatively explainable in the context of theories on quantum corrections of a strongly interacting two-dimensional system. Analysis of the results provided Fermi constant values between −0.5 and −0.8 and the Landé g-factor values between g * = 0.71 and g * = 0.85. In this system, a magnetic field strong enough to polarize the system induces a magneto-conductance and destroys the metallic state, implying that the spin state is responsible for the conductance of the metallic state, which is in accordance with several works in this framework.

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Section: Theorymentioning

confidence: 99%

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

Dlimi

kaaouachi

2020

J. Korean Phys. Soc.

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“…In order to elucidate the underlying mechanisms of the 2D-MIT, several theories have been put forth. Certain theories emphasize the role of disorder and electron–electron (e-e) interactions [ 14 , 15 , 16 , 17 , 18 ], whereas others propose spin-orbit diffusion as a potential contributing factor [ 6 , 19 ]. Recent research has particularly delved into the effects of e-e interactions on the metallic side of the MIT [ 20 , 21 , 22 , 23 ].…”

Section: Introductionmentioning

confidence: 99%

Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

Elmourabit,

Dlimi,

El Moutaouakil

et al. 2023

Nanomaterials

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Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, nsc (approximately 0.72×1011 cm−2), which marks the metal insulator transition (MIT). In close proximity to the nsc, the conductivity exhibits a linear dependence on the temperature (T). By examining the extrapolated conductivity at the absolute zero temperature (T = 0), denoted as σ0, as a function of the electron density ns, we identify two distinct regimes with varying σ0(ns) patterns, indicating the existence of two different phases. The transition from one of these two regimes to another, coinciding with nsc, is abrupt and serves as the focus of our investigation. Our aim is to establish the possibility of a percolation type transition in the 2D-Si-MOSFETs’ sample. In fact, we observed that the model of percolation is applicable only for densities very close to nsc*=n2 (where n2 is the linear extrapolation of σ0), indicating the percolation type transition essentially represents a phase transition at the zero temperature.

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“…В модели VRH не учитывается межэлектронное взаимодействие, которое пренебрежимо мало при высоких температурах. С другой стороны, при низких температурах, когда соответствующими эффектами пренебрегать нельзя, наиболее адекватной является модель Эфроса−Шкловского (ES-VRH) [3,5,6]. В двумерных системах, когда вероятность прыжков максимальна, проводимость в рамках VRH-механизма описывается следующей функцией [7,8]: -В диапазоне температур [10,11], [12], где l -длина локализации, ε = ε 0 ε r -диэлектрическая проницаемость материала.…”

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Характер Поведения Электрической Проводимости Графенового Волокна Мокрого Формирования

Dlimi,

Elmourabit,

Id Ouissaaden

et al. 2023

Письма В Журнал Технической Физики

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In this paper, we report the conductivity behavior in the insulating phase at zero magnetic field. We have theoretically investigated the temperature dependence of the electrical conductivity of wet spun graphene fiber and its composites. The temperature dependence of electronic conduction follows the law σ~exp⁡〖(E_0/E)〗^m. Indeed, the electronic conduction is dominated by the coexistence of two regimes: Efros-Shklovskii variable range hopping mechanism where m=1/2 and the activated mechanism where m=1. By using two different methods: the numerical method based on the calculation of the percentage deviation Dev (%) and the conductance curve derivative analysis method which is based on the logarithmic derivative function W=dlnσ/dlnE, we have found the exponent m is close to 1.

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Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Cited by 13 publications

References 18 publications

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well

Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

Характер Поведения Электрической Проводимости Графенового Волокна Мокрого Формирования

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