Study of insulating electrical conductivity in hydrogenated amorphous silicon–nickel alloys at very low temperature

Narjis, A.; kaaouachi, A. El; Limouny, L.; Dlimi, Said; Sybous, A.; Hemine, J.; Abdia, R.; Biskupski, G.

doi:10.1016/j.physb.2011.08.021

“…Our analysis shows that the hopping is between localized states with the creation of CG in the vicinity of the Fermi level. Contrary to previous studies [9,17,18], no vanishing of CG is observed by increasing the temperature. This may be due to the fact that the samples are far enough from the MIT as shown in hydrogenated amorphous silicon-nickel alloys [9].…”

Section: Resultscontrasting

confidence: 99%

“…Whereas, the value n=2 means that the DOS varies in the vicinity of the Fermi level and p=0.5, corresponding to ES VRH with creation of CG (Equation (2)). Both VRH regimes have been widely shown in several materials [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 87%

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Hopping conduction in amorphous silicon-chromium films at very low temperature

Errai¹,

kaaouachi²,

Idrissi³

et al. 2014

AIP Conference Proceedings

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Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

“…In order to establish the dominant hopping mechanism, we used the method of percentage deviation Dev{%}. This method is widely used in statistics to evaluate the difference between the estimated values (ρ i ) and the value of linear fits (ρ) [17,18] { } ( )…”

Section: Resultsmentioning

confidence: 99%

Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Dlimi

¹

,

Limouny

²

,

Hemine

³

et al. 2020

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Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

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“…The existence of the CG leads to the ES VRH regime of the conductivity. However, the experimental situation has been confusing for some time, with both values of being observed [19,20]. p…”

Section: Introductionmentioning

confidence: 99%

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Sybous

¹

,

kaaouachi

²

,

Hemine

³

et al. 2012

JMP

Get access via publisher Add to dashboard Cite

Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

show abstract

Study of insulating electrical conductivity in hydrogenated amorphous silicon–nickel alloys at very low temperature

Cited by 18 publications

References 11 publications

Hopping conduction in amorphous silicon-chromium films at very low temperature

Hopping conduction in amorphous silicon-chromium films at very low temperature

Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

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