Liquid Phase Epitaxy (LPE) of YB2Cu307-6 High T , SuperconductorsYBazCua07-a films were grown by liquid phase epitaxy in Y-ZrO:! crucibles on (llO)NdGa03 substrates. A change in the preferred crystallographic growth direction was observed reproducibly. The growth mode changes from pure c-axis oriented over mixed c/a-axis oriented films to pure a-axis oriented films with increasing undercooling. X-ray diffraction measurements and atomic force microscopy investigations with c-axis oriented as well as a-axis oriented films are presented. It will be shown that atomically smooth steps with 0.2-0.8 pm width can be achieved by LPE, which are free from melt remnants. Furthermore the values for the enthalpy of dissolution from literature, which are varying in a wide range, will be combined and a new value will be calculated in terms of a multi particle model.YBazCm07-a-Schichten wurden mittels Fliissigphasenepitaxie auf (llO)NdGa03-Substraten in Y-ZrOz-Tiegeln hergestellt. Es kann reproduzierbar ein Wechsel der bevorzugten kristallographischen Wachstumsrichtung bmbachtet werden. Das Wachstum wechselt mit zunehmender Unterkiihlung von rein c-Achsen orientiert uber gemischt c/a-Achsen orientierte Schichten hin zu rein a-Achsen orientierten Schichten. Sowohl von c-Achsen orientierten als auch von a-Achsen orientierten Schichten werden Rontgenbeugungsmessungen und Untersuchungen mittels Atomkraftmikros kopie priisentiert. Es kann gezeigt werden, da5 mittels LPE atomar glatte Stufenflachen von 0,2-0,8 pm Breite erreicht werden, die frei von Schmelzresten sind. Ferner werden die stark variierenden Werte fiir die molare Liisungsenthalpie aus der Literatur vereint und ein neuer Wert im Mehrteilchenmodell berechnet.
The growth‐induced anisotropy K ug of Y3−ySmy Fe5−xGaxO12 films grown by liquid phase epitaxy on {111} GGG substrates is investigated. The growth rate v and not the growth temperature TG is found to be of primary importance for K ug of films grown from the same melt. The observed dependence of K ug on the samarium content y and on the growth rate v can be satisfactorily described by a model based on growth kinetics and site preference.
To investigate more economically the conditions for the reproducible growth of bubble films, growth rate measurements are made with the help of induced striations which are generated by changes of the rotation rate. The growth of { 111) oriented Y3--ySmyFe5--zGa,0,, epilayers is studied in dependence on time, supersaturation, and substrate rotation rate. Growth conditions and equilibrium distribution coefficients are presented for Ga and Sm. The experimental results are discussed in terms of the boundary layer model.
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