Growth-induced magnetic anisotropy of (Sm, Ga)-substituted YIG films grown on {111} substrates

Abstract

The growth‐induced anisotropy K ug of Y3−ySmy Fe5−xGaxO12 films grown by liquid phase epitaxy on {111} GGG substrates is investigated. The growth rate v and not the growth temperature TG is found to be of primary importance for K ug of films grown from the same melt. The observed dependence of K ug on the samarium content y and on the growth rate v can be satisfactorily described by a model based on growth kinetics and site preference.

Garnet layers prepared by liquid phase epitaxy for microwave and magneto‐optical applications – a review

“…The critical gallium content of the transition from in-plane to perpendicular, however, depends on further parameters too, in particular on the layer thickness and misfit. With increasing undercooling the increasing bismuth content leads to a higher misfit stress -as discussed before -and with that to a tendency to out-ofplane layers, as has been shown by Linzen et al [24].…”

Damping and Interfacial Dzyaloshinskii–Moriya Interaction in Thulium Iron Garnet/Bismuth-Substituted Yttrium Iron Garnet Bilayers

“…53 K G , the fourth term, represents a uniaxial growth-induced anisotropy that originates from preferential occupancy of cations or vacancies in nonequivalent sites. 14,15,54,55 Surface and interface anisotropies 56 may also contribute to K u . All of the films in this study exhibited PMA.…”

“…c 44 is the shear modulus of the film and its value lies between 74 and 90 GPa for REIGs ,,, Surface and interface anisotropies may also contribute to K u .…”

“…10,11 Magnetoelastic anisotropy can be introduced via lattice mismatch strain in epitaxial films or thermal mismatch strain for films grown on silicon or other nongarnet substrates, 12,13 and growth-induced anisotropy can be present in REIGs with mixed RE ions. 14,15 Thin films of a number of REIGs have been grown with perpendicular magnetic anisotropy (PMA), 16−18 which is advantageous for the study of spin orbit torque (SOT) and other magnetic phenomena. REIGs are good insulators, enabling lower ohmic losses than metallic ferromagnets as they avoid parasitic current shunting from a metal overlayer.…”

“…Magnetically ordered oxide materials, such as spinels, ferrites, , and rare earth iron garnets − (REIGs) have been studied intensely for spintronic and photonic devices. In REIGs, the choice of rare earth (or other) ion allows tuning of a variety of properties, including saturation magnetization, compensation temperature, , magnetocrystalline anisotropy, magnetostriction, and Gilbert damping. , Magnetoelastic anisotropy can be introduced via lattice mismatch strain in epitaxial films or thermal mismatch strain for films grown on silicon or other nongarnet substrates, , and growth-induced anisotropy can be present in REIGs with mixed RE ions. , …”