Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of [111] B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

Thin‐film, microscale GaAs solar cells transfer printed into luminescent concentrating waveguides show significantly enhanced power output compared to cells evaluated in isolation. Experimental and numerical simulation results demonstrate that optimized configurations involve a free‐standing waveguide and a diffuse backside reflector, as a way to maximize capture of both waveguided and scattered photons. Such unusual options in engineering design suggest promising additional avenues for the use of luminescent concentration in advanced photovoltaics.

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III-V compound semiconductor nanowires (NWs), with their direct bandgaps and high mobilities, have been shown to be promising materials for many applications including solar cells, light emitting diodes, transistors, and lasers. Self-aligned, twin-plane-defect free, planar GaAs NWs can be grown by metalorganic chemical vapor deposition (MOCVD) through the Au-assisted vapor-liquid-solid mechanism. In this report, <110> planar GaAs NW growth on GaAs (100) substrates is perturbed by introducing common p-type dopant impurities, zinc (Zn) or carbon (C), and characterized structurally and electrically. The implications of the results on planar NW growth and doping mechanism are discussed.

III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (L g = 80 nm) GaAs GAA NWFETs with extremely scaled NW width (W NW = 9 nm) exhibit excellent g m linearity at biases as low as 300 mV, characterized by the high third intercept point (2.6 dbm). The high linearity is insensitive to the bias conditions, which is favorable for low power applications.Index Terms-Linearity, nanowire, gate-all-around (GAA), GaAs MOSFET, implantation-free junctionless transistor, regrowth source/drain.