Ba 0.5 Sr 0.5 TiO 3 ͑BST͒ thin films grown on Si by an in situ ultraviolet-assisted pulsed laser deposition ͑UVPLD͒ technique exhibited significantly higher dielectric constant and refractive index values and lower leakage current densities than films grown by conventional PLD under similar conditions. X-ray photoelectron spectroscopy ͑XPS͒ investigations have shown that the surface layer of the grown films contained, besides the usual BST perovskite phase, an additional phase with Ba atoms in a different chemical state. PLD grown films always exhibited larger amounts of this phase, which was homogeneously mixed with the BST phase up to several nm depth, while UVPLD grown films exhibited a much thinner ͑ϳ1 nm͒ and continuous layer. The relative fraction of this phase was not correlated with the amount of C atoms present on the surface. Fourier transform infrared spectroscopy did not find any BaCO 3 contamination layer, which was believed to be related to this new phase. X-ray diffraction measurement showed that although PLD grown films contained less oxygen atoms, the lattice parameter was closer to the bulk value than that of UVPLD grown films. After 4 keV Ar ion sputtering for 6 min, XPS analysis revealed a small suboxide Ba peak for the PLD grown films. This finding indicates that the average Ba-O bonds are weaker in these films, likely due to the presence of oxygen vacancies. It is suggested here that this new Ba phase corresponds to a relaxed BST surface layer.

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In this letter, we report on the low temperature (∼350°C) growth of Hf–Al–O dielectric films with improved thermal stability and electrical characteristics for gate dielectric applications. A higher capacitance and improved interfacial properties were observed in the films deposited with NH3 ambient followed by ultraviolet radiation assisted oxidation annealing. The films containing 10.6at.% Al were found to remain amorphous after a 900°C furnace anneal for 1min in flowing nitrogen. The flat-band voltage was stabilized by nitrogen incorporation with negligible shift. An equivalent oxide thickness of 19Å and a dielectric constant of 20.4 were obtained in the best samples processed in NH3 and ultraviolet radiation ambient.

Uniaxial-mechanical-stress altered gate leakage current and dielectric constant of silicon metal-oxide-semiconductor (MOS) devices with nitrided Hf-silicate (HfSiON) dielectric are measured as a function of uniaxial stress applied using four-point wafer bending along the [110] direction. The gate leakage current and dielectric constant are found to increase by ∼2% per 100MPa of tensile and compressive stresses. A decrease in hole trap activation energy in hafnium oxide-based dielectric is used to explain the mechanical stress altered gate leakage. It is proposed that the HfSiON dielectric constant increase results from band gap narrowing caused by strain induced N p band splitting.

Purpose Quantum-dot cellular automata (QCA) is a promising technology, which seems to be the prospective substitute for complementary metal-oxide semiconductor (CMOS). It is a high speed, high density and low power paradigm producing efficient circuits. These days, most of the smart devices used for computing, make use of random access memory (RAM). To enhance the performance of a RAM cell, researchers are putting effort to minimize its area and access time. Multilayer structures in QCA framework are area efficient, fast and immune to the random interference. Unlike CMOS, QCA multilayer architectures can be designed using active components on different layers. Thus, using multilayer topology in the design of a RAM cell, which is not yet reported in the literature can improve the performance of RAM and hence, the computing device. This paper aims to present the modular design of RAM cell with multilayer structures in the QCA framework. The fundamental modules such as XOR gate, 2:1 multiplexer and D latch are proposed here using multilayer formations with the goal of designing a RAM cell with the provision of read, write, set and reset control. Design/methodology/approach All the modules used to design a RAM cell are designed using multilayer approach in QCA framework. Findings The proposed multilayer RAM cell is optimized and has shown an improvement of 20% in cell count, 30% in area, 25% in area latency product and 48.8% in cost function over the other efficient RAM designs with set/reset ability reported earlier. The proposed RAM cell is further analyzed for the fault tolerance and power dissipation. Research limitations/implications Due to the multilayer structure, the complexity of the circuit enhances which can be eliminated using simple architectures. Originality/value The performance metrics and results obtained establish that the multilayer approach can be implemented in the QCA circuit to produce area efficient and optimized sequential circuits such as a latch, flip flop and memory cells.

Background Intravitreal medication injections represent the gold standard treatment for a variety of potentially blinding chorioretinal vascular diseases. Despite their excellent safety profile, they are associated with the feared complication of injection-related endophthalmitis (IRE). Though the overall incidence of IRE is low, due to the ever-increasing number of injections being performed, it is a complication that all retina specialists are likely to encounter. This article reviews various factors that could potentially influence the risk of IRE and discusses evidence-based strategies for management. Method PubMed was searched for keywords “intravitreal injection” and “endophthalmitis” from the period of 1995–2021. Relevant articles were reviewed and selected articles were analyzed with respect to the incidence, potential preventive factors, clinical presentation, microbial profile, management, and outcomes for IRE. Results There is strong consensus supporting the use of povidone iodine topical antiseptic, eyelid retraction away from the injection site, and avoiding treatment of eyes with active surface or eyelid disease, but there is less agreement on the use of face masks versus “no-talking” policies and optimal anesthetic technique. Current evidence comparing tap and inject or early vitrectomy for treatment of IRE is inadequate to determine an optimal treatment strategy. Conclusion Intravitreal injections are sight saving, but even using established prophylactic measures there remains a small but real risk of infectious injection-related complications. Further investigations comparing tap and inject versus vitrectomy may help to establish optimal treatment, although the rarity of IRE makes designing adequately powered prospective trials a difficult task.

Reversible logic and Quantum dot cellular automata are the prospective pillars of quantum computing. These paradigms can potentially reduce the size and power of the future chips while simultaneously maintaining the high speed. RAM cell is a crucial component of computing devices. Design of a RAM cell using a blend of reversible logic and QCA technology will surpass the limitations of conventional RAM structure. This motivates us to explore the design of a RAM cell using reversible logic in QCA framework. The performance of a reversible circuit can be improved by utilizing a resilient reversible gate. This paper presents the design of QCA-based reversible RAM cell using an efficient, fault-tolerant and low power reversible gate. Initially, a novel reversible gate is proposed and implemented in QCA. The QCA layout of the proposed reversible gate is designed using a unique multiplexer circuit. Further, a comprehensive analysis of the gate is carried out for standard Boolean functions, cost function and power dissipation and it has been found that the proposed gate is 75.43% more cost-effective and 58.54% more energy-efficient than the existing reversible gates. To prove the inherent testability of the proposed gate, its rigorous testing is carried out against various faults and the proposed gate is found to be 69.2% fault-tolerant. For all the performance parameters, the proposed gate has performed considerably better than the existing ones. Furthermore, the proposed gate is explicitly used for designing reversible D latch and RAM cell, which are crucial modules of sequential logic circuits. The proposed latch is 45.4% more cost effective than the formerly reported D latch. The design of QCA-based RAM cell using reversible logic is novel and not reported earlier in the literature.