Resistance switching (RS) devices have potential to offer computing and memory function. A new computer unit is built of RS array, where processing and storing of information occur on same devices. Resistance states stored in devices located in arbitrary positions of RS array can be performed various nonvolatile logic operations. Logic functions can be reconfigured by altering trigger signals.
Nonvolatile and cascadable stateful logic operations are experimentally demonstrated within a 1 k-bit one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) array, where NAND gates serve as the building blocks. A robust dual-gate-voltage operation scheme is proposed. The effects of the transistor ON logic operation and the robustness to device parameter variations are discussed. The parallel 4-bit bitwise XOR operation is experimentally implemented in the 1T1R array by cascading NAND gates. This letter presents a feasible approach to in-memory computing for large-scale circuits.
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