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Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

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Modern maize (Zea mays L.) hybrids are generally regarded as strongly population dependent because maximum grain yields (GYs) per area are achieved primarily in high-density populations. is study was conducted to analyze changes in density independence with plant density based on the response of GY, dry matter (DM) accumulation, and the harvest index (HI) to changes in plant density. Two modern cultivars, ZhengDan958 and ZhongDan909, were planted at 12 densities ranging from 1.5 to 18 plants m -2 . e experiment was conducted for 3 yr, with drip irrigation and plastic mulching, at the 71 Group and Qitai Farms located in Xinjiang, China. With increased plant density, DM accumulation per area increased logarithmically, the HI decreased according to a cubic curve, and GY per area increased quadratically; the optimum density was 10.57 plants m -2 . Further analysis showed that the response of GY per area, DM per area, and the HI to changes in plant density could be divided into four density ranges: Range I (£4.7 plants m -2 ), in which DM per area, the HI, and GY per area were signi cantly a ected by density; Range II (4.7-8.3 plants m -2 ), in which the HI was una ected by density but DM per area and GY per area were signi cantly a ected; Range III (8.3-10.75 plants m -2 ), in which GY per area was una ected by density but DM per area and the HI were signi cantly a ected; and Range IV (³10.7 plants m -2 ), in which DM per area was una ected by density but the HI and GY per area were signi cantly a ected. ese results indicated that Range II is a density-independent range and Range III is a GY-stable range.

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2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS 2 ) is demonstrated in this study. The few-layer PtS 2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm 2 V −1 s −1 and ultrahigh on/off ratio over 10 6 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS 2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS 2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 µs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.

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