Abstract. The texturization of monocrystalline silicon wafers using a mixture of potassium hydroxide and isopropyl alcohol solutions has been investigated. The texture morphology and pyramid size are affected by the KOH concentration, the temperature and the time together. The surface reflectance and the surface morphology were measured with a UV-Visible Spectrophotometer and a scanning electronic microscope (SEM) respectively. We reported a relatively uniform size, dense arrangement pyramid microstructure on the basement of silicon texture. According to the reflectance and SEM patterns, we got the appropriate concentration of KOH, 20wt% and 25wt%, with the corresponding reflectance were 12.049% and 14.593%. It means that either too low temperature with a long time or too high temperature with a short can damage the formation. We got the surface morphology, which was consisted of 1-1.5 µm sized pyramids. From the pyramid dimension, the optimum process condition was found to be 20wt% KOH, 3wt% IPA, 60˚C and 5 min at which was reduced to 1.292µm. From the SEM images density and uniformity, the optimized condition is 20wt% KOH, 3wt% IPA, 70˚C and 15mins though its size has reached the 1.404µm.
Abstract. The fabrication method of microstructure for monocrystalline silicon wafers based on a mixture of sodium carbonate and sodium bicarbonate solutions under different conditions has been studied in this work. The texturization process has been evaluated in terms of the surface morphology size and the coverage rate. The experiments show that the influence of Na 2 CO 3 concentration is significant by varying the concentration between 5 wt% and 30 wt%. It was shown that with the concentration of Na 2 CO 3 changing, the average size of pyramidal varies from 1.20 μm to 2.44 μm. In a word, the surface were not uniform and exhibited wide bright zones in which the texturization process was not successful. However, we find it possible to get a better pyramid structure by the addition of NaHCO 3 . Uniform microstructure in the wafers of monocrystalline silicon were formed with 20 wt% sodium carbonate and 5 wt% sodium bicarbonate at 90 °C for 20 min. Under optimized conditions, the textured silicon wafers surface exhibit a lower average size (about 0.96 μm) and the coverage rate is high.
The pyramid construction was formed by different K 3 PO 4 concentrations and texturing time. The pyramid microstructure evolution on monocrystalline silicon surface has been studied. We found that the pyramid is approximately 1.3μm in mean size and almost covered the silicon surface with 6wt% K 3 PO 4 for 10min. The pyramid mean size is approximately 1.2 μm and uniform with 26wt% K 3 PO 4 for 5min. Texturing time has a crucial influence on the pyramid size and K 3 PO 4 concentration has a significant influence on the etching rate. With the K 3 PO 4 concentration increasing, the pyramid size becomes smaller, and the etching rate reduces. Furthermore, the average reflectivity of silicon surface has also been studied. For the textured silicon surface, the average reflectivity obtained in the optimal etching conditions (6wt% K 3 PO 4 + 2wt% K 2 SiO 3 , 85℃, and 20 min) is close to 11.6%. When texturing time is 5 min, the lowest average reflectivity is about 17.2% with different K 3 PO 4 concentrations. This technique provides an alternative way for production high-efficiency silicon solar cells.
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