Ultraviolet-visible-near infrared (UV-Vis-NIR) broadband detection is important for image sensing, communication, and environmental monitoring, yet remains as a challenge in achieving high external quantum efficiency (EQE) in the broad spectrum range. Herein, sensitive broadband integrated photodetectors (PDs) with high EQE levels are reported. The organic bulk-heterojunction (OBHJ) layer, based on a NIR sensitive organic acceptor, is employed to extend the response spectrum of the perovskite PDs. A key strategy of introducing dual electron transport materials respectively for Vis and NIR regions into the active layer of integrated PDs is applied. Further combined with the proper energy level alignment and reasonable distribution of PC BM in the active layer, the extraction and transport of photo induced charges in between perovskite and OBHJ is promoted efficiently. The integrated PD with the optimized structure exhibits an EQE mostly beyond 70% in the Vis-NIR region, which is the highest value among the ever reported solution-processable broadband PDs. The highest responsivity is 0.444 and 0.518 A W in the Vis and NIR region, respectively. The specific detectivity is beyond 10 Jones in the range from 340 to 940 nm, enabling the device to detect weak signals in the UV to NIR broad region.

A merged annealing process based high quality 2D perovskite film and the corresponding PVSC with a PCE beyond 13%.

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