This study examined the unique and interactive effects of various career-specific parenting practices (i.e., parental career support, interference, and lack of engagement) on Chinese high school students’ career decision-making self-efficacy (CDSE) as well as the mediating role of autonomy in such associations. Based on data from 641 Chinese high school students (47.6% male; mean age = 15.28 years old, SD = 0.49) in 2016, two moderated mediating effects were identified. Higher level of parental career engagement strengthened the positive association between parental career support and adolescents’ autonomy, which in turn, was associated positively with adolescents’ CDSE. Parental career interference related negatively with adolescents’ CDSE via autonomy when lack of parental career engagement was low, but related positively with adolescents’ CDSE via autonomy when lack of parental career engagement was high. These findings advance our understanding of the underlying processes between career-specific parenting practices and adolescents’ CDSE. Implications for practices were discussed.

No abstract

No abstract

School engagement plays a prominent role in promoting academic accomplishments. In contrast to the relative wealth of research that examined the impact of students’ school engagement on their academic achievement, considerably less research has investigated the effect of high school students’ prior achievement on their school engagement. The present study examined the relationship between prior achievement and school engagement among Chinese high school students. Based on the Dweck’s social-cognitive theory of motivation, we further examined the moderating effect of students’ theories of intelligence (TOIs) on this relationship. A total of 4036 (2066 girls) students from five public high school enrolled in grades 10 reported their high school entrance exam achievement in Chinese, Math and English, school engagement, and TOIs. Results showed that (a) students’ prior achievement predicted their behavioral, emotional, and cognitive engagement, respectively, and (b) the association between prior achievement and behavioral, emotional, and cognitive engagement is strong for students with an incremental theory but not for those with an entity theory in the emotional and cognitive engagement. These findings suggest that prior achievement and incremental theory were implicated in relation to adolescents’ school engagement. Implications and future research directions were discussed.

Using three-wave longitudinal data, this study tested the potential mediating roles of teacher–student relationship quality and teachers’ career support efficacy in the association between Chinese adolescents’ family socioeconomic status (SES) and career development ( N = 1410). Results showed that adolescents’ family SES at Wave 1 was negatively associated with their career ambivalence at Wave 3 via positive associations with both teacher–student relationship quality and teachers’ career support efficacy at Wave 2. Moreover, adolescents’ family SES at Wave 1 was positively related to career adaptability at Wave 3 via its positive association with teachers’ career support efficacy at Wave 2. This study highlighted the important role of teacher–student interaction in adolescents’ career development.

No abstract

No abstract

The IC industry in the Chinese mainland has encountered the difficulty caused by the embargo on lithography machines in developing state-of-the-art semiconductor IC processes. For the first time, this work fabricates out the HVTFET which we have independent intellectual property rights. A 50 nm channel length N HVTFET device is fabricated successfully using a 0.35 µm process, and its characteristics are close to those of TSMC’s 55 nm planar N MOSFET. The experimental results of this paper have two important significances. First, it shows that the fabrication of the advanced ICs in the Chinese mainland can get rid of the limitation of the lithography machine by using the HVTFET. Second, it shows that it is possible to decrease the chip area by about 3/4 by using the HVTFET structure for the ICs with 28 nm and above planar MOS processes, which are quite common in China.