Abstract:The IC industry in the Chinese mainland has encountered the difficulty caused by the embargo on lithography machines in developing state-of-the-art semiconductor IC processes. For the first time, this work fabricates out the HVTFET which we have independent intellectual property rights. A 50 nm channel length N HVTFET device is fabricated successfully using a 0.35 µm process, and its characteristics are close to those of TSMC’s 55 nm planar N MOSFET. The experimental results of this paper have two important si… Show more
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